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PJM10P30PA

Public Made by Adom

by adom

PJSEMI MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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PJM10P30PA

PJSEMI · MOSFETs · SOP-8

PJM10P30PA from PJSEMI, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Source passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are internally common Source connections, with the absolute maximum source-drain ratings of VDS 30 V and continuous ID 10 A.
2 Source passive Source terminal of the P-channel MOSFET, common with pins 1 and 3, with the absolute maximum ratings of VDS 30 V and continuous ID 10 A.
3 Source passive Source terminal of the P-channel MOSFET, common with pins 1 and 2, with the absolute maximum ratings of VDS 30 V and continuous ID 10 A.
4 Gate input Gate control terminal of the MOSFET; the gate-source voltage is rated at ±20 V.
5 Drain passive Drain terminal of the P-channel MOSFET; pins 5 through 8 are common Drain connections, rated for VDS 30 V and continuous ID 10 A.
6 Drain passive Drain terminal of the P-channel MOSFET, common with pins 5, 7 and 8, rated for VDS 30 V and continuous ID 10 A.
7 Drain passive Drain terminal of the P-channel MOSFET, common with pins 5, 6 and 8, rated for VDS 30 V and continuous ID 10 A.
8 Drain passive Drain terminal of the P-channel MOSFET, common with pins 5, 6 and 7, rated for VDS 30 V and continuous ID 10 A.

Key specifications

Parameter Value
Manufacturer PJSEMI
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage -V(BR)DSS 30 V VGS=0V, ID=-250μA 2
Zero Gate Voltage Drain Current -IDSS 1 μA VDS=-30V, VGS=0V 2
Gate-Body Leakage Current -IGSS -100 100 nA VGS=±20V, VDS=0V 2
Gate Threshold Voltage -VGS(th) 1 1.5 2.4 V VDS=VGS, ID=-250μA 2
Drain-Source On-Resistance (VGS=-10V) RDS(on) 16 23 mΩ VGS=-10V, ID=-10A 2
Drain-Source On-Resistance (VGS=-4.5V) RDS(on) 25 34 mΩ VGS=-4.5V, ID=-5A 2
Diode Forward Voltage -VSD 1.2 V VGS=0V, IS=-10A 2
Diode Forward Current -IS 10 A 2
Drain-Source Voltage -VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current-Continuous -ID 10 A 1
Drain Current-Pulsed -IDM 40 A Note 1: repetitive rating, pulse width limited by maximum junction temperature 1
Maximum Power Dissipation PD 3.7 W 1
Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 33.8 °C/W Note 2: surface mounted on FR4 board, t ≤ 10 sec 1

CAD (KiCad official)

  • Symbol: PJM10P30PA
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: pjm10p30pa-etched.step / pjm10p30pa-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); pjm10p30pa.step / pjm10p30pa.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: PJSEMI datasheet (5 pp, sha256 6defdc33082a77bc, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF