component
FDN5630
Public Made by Adomby adom
UMW MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownFDN5630
UMW · MOSFETs · SOT-23
FDN5630 from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the MOSFET; gate-source voltage is rated at ±20 V (VGSS). |
| 2 | S | passive | SOURCE terminal of the MOSFET; device drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 1.9 A (ID). |
| 3 | D | passive | DRAIN terminal of the MOSFET; rated at 60 V drain-source voltage (VDSS) and 1.9 A continuous drain current (ID). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain Current - Continuous | ID | 1.9 | A | 1 | |||
| Drain Current - Pulsed | ID | 10 | A | Pulsed (Note 1a) | 1 | ||
| Power Dissipation for Single Operation | PD | 0.5 | W | Note 1a | 1 | ||
| Power Dissipation for Single Operation | PD | 0.46 | W | Note 1b | 1 | ||
| Operating and Storage Junction Temperature Range | TJ,TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 250 | °C/W | Note 1a | 2 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 75 | °C/W | Note 1 | 2 | ||
| Drain-Source Breakdown Voltage | VDS | 60 | V | VDS=0V, ID=250μA | 3 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 3 | ||
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) | 75 | 85 | mΩ | VGS=10V, ID=1.9A | 3 | |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) | 86 | 96 | mΩ | VGS=4.5V, ID=1.7A | 3 | |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔVDS/TJ | 55 | mV/°C | ID=250μA | 3 | ||
| Gate-Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/TJ | -5 | mV/°C | ID=250μA | 3 |
CAD (KiCad official)
- Symbol:
FDN5630 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
fdn5630-etched.step/fdn5630-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);fdn5630.step/fdn5630.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
1fb2de603b1cb579, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).