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FDN5630

UMW · MOSFETs · SOT-23

FDN5630 from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input GATE terminal of the MOSFET; gate-source voltage is rated at ±20 V (VGSS).
2 S passive SOURCE terminal of the MOSFET; device drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 1.9 A (ID).
3 D passive DRAIN terminal of the MOSFET; rated at 60 V drain-source voltage (VDSS) and 1.9 A continuous drain current (ID).

Key specifications

Parameter Value
Manufacturer UMW
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGSS -20 20 V 1
Drain Current - Continuous ID 1.9 A 1
Drain Current - Pulsed ID 10 A Pulsed (Note 1a) 1
Power Dissipation for Single Operation PD 0.5 W Note 1a 1
Power Dissipation for Single Operation PD 0.46 W Note 1b 1
Operating and Storage Junction Temperature Range TJ,TSTG -55 150 °C 1
Thermal Resistance, Junction-to-Ambient RθJA 250 °C/W Note 1a 2
Thermal Resistance, Junction-to-Case RθJC 75 °C/W Note 1 2
Drain-Source Breakdown Voltage VDS 60 V VDS=0V, ID=250μA 3
Gate-Source Leakage IGSS -100 100 nA VDS=0V, VGS=±20V 3
Zero Gate Voltage Drain Current IDSS 1 µA VDS=60V, VGS=0V 3
Drain-Source On-State Resistance (VGS=10V) RDS(ON) 75 85 mΩ VGS=10V, ID=1.9A 3
Drain-Source On-State Resistance (VGS=4.5V) RDS(ON) 86 96 mΩ VGS=4.5V, ID=1.7A 3
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/TJ 55 mV/°C ID=250μA 3
Gate-Source Threshold Voltage Temperature Coefficient ΔVGS(th)/TJ -5 mV/°C ID=250μA 3

CAD (KiCad official)

  • Symbol: FDN5630
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: fdn5630-etched.step / fdn5630-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); fdn5630.step / fdn5630.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 1fb2de603b1cb579, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF