# FDN5630

**UMW** · MOSFETs · SOT-23

FDN5630 from UMW, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the MOSFET; gate-source voltage is rated at ±20 V (VGSS). |
| 2 | S | passive | SOURCE terminal of the MOSFET; device drain-source voltage is rated at 60 V (VDSS) with continuous drain current of 1.9 A (ID). |
| 3 | D | passive | DRAIN terminal of the MOSFET; rated at 60 V drain-source voltage (VDSS) and 1.9 A continuous drain current (ID). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 1.9 | A |  | 1 |
| Drain Current - Pulsed | ID |  |  | 10 | A | Pulsed (Note 1a) | 1 |
| Power Dissipation for Single Operation | PD |  |  | 0.5 | W | Note 1a | 1 |
| Power Dissipation for Single Operation | PD |  |  | 0.46 | W | Note 1b | 1 |
| Operating and Storage Junction Temperature Range | TJ,TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 250 | °C/W | Note 1a | 2 |
| Thermal Resistance, Junction-to-Case | RθJC |  |  | 75 | °C/W | Note 1 | 2 |
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VDS=0V, ID=250μA | 3 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS=60V, VGS=0V | 3 |
| Drain-Source On-State Resistance (VGS=10V) | RDS(ON) |  | 75 | 85 | mΩ | VGS=10V, ID=1.9A | 3 |
| Drain-Source On-State Resistance (VGS=4.5V) | RDS(ON) |  | 86 | 96 | mΩ | VGS=4.5V, ID=1.7A | 3 |
| Drain-Source Breakdown Voltage Temperature Coefficient | ΔVDS/TJ |  | 55 |  | mV/°C | ID=250μA | 3 |
| Gate-Source Threshold Voltage Temperature Coefficient | ΔVGS(th)/TJ |  | -5 |  | mV/°C | ID=250μA | 3 |

## CAD (KiCad official)

- Symbol: `FDN5630`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `fdn5630-etched.step` / `fdn5630-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `fdn5630.step` / `fdn5630.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [UMW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8755877207644213248) (9 pp, sha256 `1fb2de603b1cb579`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/fdn5630-datasheet.pdf)