component
IPB027N10N3G
Public Made by Adomby adom
UMW MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIPB027N10N3G
UMW · MOSFETs · TO-263
IPB027N10N3G from UMW, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V and the gate threshold voltage VGS(th) is 2 V min, 2.7 V typ, 3.5 V max at ID=275 µA. |
| 2 | D | passive | Drain terminal; drain-source voltage is 100 V (VDS), continuous drain current is 120 A at TC=25 °C, and pulsed drain current is 480 A. |
| 3 | S | passive | Source terminal; the on-resistance RDS(on) from drain to source is 2.7 mΩ max at VGS=10 V and ID=100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
CAD (KiCad official)
- Symbol:
IPB027N10N3G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ipb027n10n3g-etched.step/ipb027n10n3g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipb027n10n3g.step/ipb027n10n3g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (9 pp, sha256
89d568a57936994d, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).