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IPB027N10N3G

Public Made by Adom

by adom

UMW MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IPB027N10N3G

UMW · MOSFETs · TO-263

IPB027N10N3G from UMW, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage is rated at ±20 V and the gate threshold voltage VGS(th) is 2 V min, 2.7 V typ, 3.5 V max at ID=275 µA.
2 D passive Drain terminal; drain-source voltage is 100 V (VDS), continuous drain current is 120 A at TC=25 °C, and pulsed drain current is 480 A.
3 S passive Source terminal; the on-resistance RDS(on) from drain to source is 2.7 mΩ max at VGS=10 V and ID=100 A.

Key specifications

Parameter Value
Manufacturer UMW
Package TO-263
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IPB027N10N3G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ipb027n10n3g-etched.step / ipb027n10n3g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipb027n10n3g.step / ipb027n10n3g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (9 pp, sha256 89d568a57936994d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF