component
MMBZ27VALFHT116
Public Made by Adomby adom
ROHM Semicon TVS, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownMMBZ27VALFHT116
ROHM Semicon · TVS · SOT-23
MMBZ27VALFHT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the first TVS diode (unidirectional, dual-diode common-anode device) with VRWM 22.0 V and VBR 25.65 to 28.35 V at 1 mA. |
| 2 | Cathode | passive | Cathode of the second TVS diode (unidirectional, dual-diode common-anode device) with VRWM 22.0 V and VBR 25.65 to 28.35 V at 1 mA. |
| 3 | Anode | passive | Common anode of both TVS diodes, typically tied to ground, with 40 W peak pulse power (10/1000us) rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (MMBZ12VAL to MMBZV33AL row, applies to MMBZ27VAL) | PPP2 | 40 | W | tp=10/1000us | 1 | ||
| Power dissipation on glass-epoxy substrate | PD1 | 225 | mW | On glass-epoxy substrate | 1 | ||
| Power dissipation on alumina substrate | PD2 | 300 | mW | On alumina substrate | 1 | ||
| ESD capability, IEC61000-4-2 air discharge | VESD | 30 | kV | IEC61000-4-2 Air; C=150pF R=330Ω | 1 | ||
| ESD capability, IEC61000-4-2 contact discharge | VESD | 30 | kV | IEC61000-4-2 Contact; C=150pF R=330Ω | 1 | ||
| ESD capability, machine model | VESD | 2 | kV | Machine model C=200pF R=0Ω | 1 | ||
| ESD capability, human body model | VESD | 8 | kV | MIL-STD-883 level3; C=100pF R=1.5kΩ | 1 | ||
| ESD capability, charged device model | VESD | 500 | V | CDM (Charged device model) | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -65 | 150 | ℃ | 1 | ||
| Breakdown voltage (MMBZ27VAL) | VBR | 25.65 | 27 | 28.35 | V | IT = 1 mA, 40 ms pulse | 2 |
| Reverse stand-off voltage (MMBZ27VAL) | VRWM | 22 | V | 2 | |||
| Reverse current (MMBZ27VAL) | IR | 0.005 | μA | VR = 22.0 V | 2 | ||
| Forward voltage (MMBZ27VAL) | VF | 0.9 | V | IF = 10 mA | 2 | ||
| Peak pulse current (MMBZ27VAL) | Ipp | 1 | A | 10/1000us | 2 | ||
| Clamping voltage (MMBZ27VAL) | Vcl | 40 | V | Ipp = 1.00 A, 10/1000us | 2 |
CAD (KiCad official)
- Symbol:
MMBZ27VALFHT116 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
mmbz27valfht116-etched.step/mmbz27valfht116-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);mmbz27valfht116.step/mmbz27valfht116.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (8 pp, sha256
b0d7c0d5714e0a4a, retrieved 2026-10-30, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).