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MMBZ27VALFHT116

ROHM Semicon · TVS · SOT-23

MMBZ27VALFHT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Cathode passive Cathode of the first TVS diode (unidirectional, dual-diode common-anode device) with VRWM 22.0 V and VBR 25.65 to 28.35 V at 1 mA.
2 Cathode passive Cathode of the second TVS diode (unidirectional, dual-diode common-anode device) with VRWM 22.0 V and VBR 25.65 to 28.35 V at 1 mA.
3 Anode passive Common anode of both TVS diodes, typically tied to ground, with 40 W peak pulse power (10/1000us) rating.

Key specifications

Parameter Value
Manufacturer ROHM Semicon
Package SOT-23
Category Circuit Protection
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Peak pulse power (MMBZ12VAL to MMBZV33AL row, applies to MMBZ27VAL) PPP2 40 W tp=10/1000us 1
Power dissipation on glass-epoxy substrate PD1 225 mW On glass-epoxy substrate 1
Power dissipation on alumina substrate PD2 300 mW On alumina substrate 1
ESD capability, IEC61000-4-2 air discharge VESD 30 kV IEC61000-4-2 Air; C=150pF R=330Ω 1
ESD capability, IEC61000-4-2 contact discharge VESD 30 kV IEC61000-4-2 Contact; C=150pF R=330Ω 1
ESD capability, machine model VESD 2 kV Machine model C=200pF R=0Ω 1
ESD capability, human body model VESD 8 kV MIL-STD-883 level3; C=100pF R=1.5kΩ 1
ESD capability, charged device model VESD 500 V CDM (Charged device model) 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -65 150 ℃ 1
Breakdown voltage (MMBZ27VAL) VBR 25.65 27 28.35 V IT = 1 mA, 40 ms pulse 2
Reverse stand-off voltage (MMBZ27VAL) VRWM 22 V 2
Reverse current (MMBZ27VAL) IR 0.005 μA VR = 22.0 V 2
Forward voltage (MMBZ27VAL) VF 0.9 V IF = 10 mA 2
Peak pulse current (MMBZ27VAL) Ipp 1 A 10/1000us 2
Clamping voltage (MMBZ27VAL) Vcl 40 V Ipp = 1.00 A, 10/1000us 2

CAD (KiCad official)

  • Symbol: MMBZ27VALFHT116
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: mmbz27valfht116-etched.step / mmbz27valfht116-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); mmbz27valfht116.step / mmbz27valfht116.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ROHM Semicon datasheet (8 pp, sha256 b0d7c0d5714e0a4a, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF