# MMBZ27VALFHT116

**ROHM Semicon** · TVS · SOT-23

MMBZ27VALFHT116 from ROHM Semicon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Cathode | passive | Cathode of the first TVS diode (unidirectional, dual-diode common-anode device) with VRWM 22.0 V and VBR 25.65 to 28.35 V at 1 mA. |
| 2 | Cathode | passive | Cathode of the second TVS diode (unidirectional, dual-diode common-anode device) with VRWM 22.0 V and VBR 25.65 to 28.35 V at 1 mA. |
| 3 | Anode | passive | Common anode of both TVS diodes, typically tied to ground, with 40 W peak pulse power (10/1000us) rating. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-23 |
| Category | Circuit Protection |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Peak pulse power (MMBZ12VAL to MMBZV33AL row, applies to MMBZ27VAL) | PPP2 |  |  | 40 | W | tp=10/1000us | 1 |
| Power dissipation on glass-epoxy substrate | PD1 |  |  | 225 | mW | On glass-epoxy substrate | 1 |
| Power dissipation on alumina substrate | PD2 |  |  | 300 | mW | On alumina substrate | 1 |
| ESD capability, IEC61000-4-2 air discharge | VESD |  |  | 30 | kV | IEC61000-4-2 Air; C=150pF R=330Ω | 1 |
| ESD capability, IEC61000-4-2 contact discharge | VESD |  |  | 30 | kV | IEC61000-4-2 Contact; C=150pF R=330Ω | 1 |
| ESD capability, machine model | VESD |  |  | 2 | kV | Machine model C=200pF R=0Ω | 1 |
| ESD capability, human body model | VESD |  |  | 8 | kV | MIL-STD-883 level3; C=100pF R=1.5kΩ | 1 |
| ESD capability, charged device model | VESD |  |  | 500 | V | CDM (Charged device model) | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -65 |  | 150 | ℃ |  | 1 |
| Breakdown voltage (MMBZ27VAL) | VBR | 25.65 | 27 | 28.35 | V | IT = 1 mA, 40 ms pulse | 2 |
| Reverse stand-off voltage (MMBZ27VAL) | VRWM |  |  | 22 | V |  | 2 |
| Reverse current (MMBZ27VAL) | IR |  |  | 0.005 | μA | VR = 22.0 V | 2 |
| Forward voltage (MMBZ27VAL) | VF |  |  | 0.9 | V | IF = 10 mA | 2 |
| Peak pulse current (MMBZ27VAL) | Ipp |  |  | 1 | A | 10/1000us | 2 |
| Clamping voltage (MMBZ27VAL) | Vcl |  |  | 40 | V | Ipp = 1.00 A, 10/1000us | 2 |

## CAD (KiCad official)

- Symbol: `MMBZ27VALFHT116`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `mmbz27valfht116-etched.step` / `mmbz27valfht116-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `mmbz27valfht116.step` / `mmbz27valfht116.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ROHM Semicon datasheet](docs/mmbz27valfht116-datasheet.pdf) (8 pp, sha256 `b0d7c0d5714e0a4a`, retrieved 2026-10-30, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/mmbz27valfht116-datasheet.pdf)