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Contents

README

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NSI8021N1-DSPR

NOVOSENSE · Digital Isolators · SOIC-8

NSI8021N1-DSPR from NOVOSENSE, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 VDD1 power_in Power supply for isolator side 1, operating from 2.5 V to 5.5 V, with a 0.1 µF bypass capacitor required between VDD1 and GND1 placed as close to the package as possible.
2 OUTA output Logic output A, with absolute maximum output voltage of -0.4 V to VDD+0.4 V (not to exceed 6.5 V) and output current rated at ±15 mA.
3 INB input Logic input B, with absolute maximum input voltage of -0.4 V to VDD+0.4 V (not to exceed 6.5 V).
4 GND1 power_in Ground 1, the ground reference for isolator side 1.
5 GND2 power_in Ground 2, the ground reference for isolator side 2.
6 OUTB output Logic output B, with absolute maximum output voltage of -0.4 V to VDD+0.4 V (not to exceed 6.5 V) and output current rated at ±15 mA.
7 INA input Logic input A, with absolute maximum input voltage of -0.4 V to VDD+0.4 V (not to exceed 6.5 V).
8 VDD2 power_in Power supply for isolator side 2, operating from 2.5 V to 5.5 V, with a 0.1 µF bypass capacitor required between VDD2 and GND2 placed as close to the package as possible.

Key specifications

Parameter Value
Manufacturer NOVOSENSE
Package SOIC-8
Category Signal Isolation Devices
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Power Supply Voltage VDD1, VDD2 -0.5 6.5 V 3
Power Supply Voltage (recommended operating range) VDD1, VDD2 2.5 5.5 V Ta=-40℃ to 125℃ 3
Maximum Input Voltage VINA, VINB -0.4 V 3
Maximum Output Voltage VOUTA, VOUTB -0.4 V 3
Maximum Input/Output Pulse Voltage VINA, VINB, VOUTA, VOUTB -0.8 V Pulse width less than 100ns, duty cycle less than 10% 3
Common-Mode Transients CMTI -100 100 kV/us 3
Output current Io -15 15 mA 3
Maximum Surge Isolation Voltage VIOSM 5.3 kV 3
Operating Temperature Topr -40 125 ℃ 3
Storage Temperature Tstg -40 150 ℃ 3
Electrostatic discharge HBM HBM -4000 4000 V 3
Electrostatic discharge CDM CDM -2000 2000 V 3
Input Pull high or low Current Ipull 8 15 uA VDD1, VDD2 = 2.5V~5.5V 3
Common Mode Transient Immunity CMTI -80 100 80 kV/us 4
Data Rate DR 0 10 Mbps VDD1=VDD2=5V±10%, Ta=-40℃ to 125℃ 4
Output impedance tolerance (typical 50 ohm) Rout -40 40 % Typical output impedance of isolator driver channel, approximately 50 ohm 10
Case Temperature Ts 150 ℃ DIN VDE V 0884-11 insulation characteristics 8
Power on Reset threshold VDDPOR 2.2 V POR threshold as during power-up 3
POR threshold Hysteresis VDD HYS 0.1 V POR threshold Hysteresis 3
Low Level Output Voltage VOL 0.3 V IOL ≤ 4mA 3
Output Impedance Rout 50 ohm 3
Start Up Time after POR trbs 40 usec 4
Supply current IDD1(Q0) IDD1(Q0) 0.8 mA VDD1=VDD2=5V±10%; All Input 0V for NSI8021x0 Or All Input at supply for NSI8021x1 4
Supply current IDD2(Q0) IDD2(Q0) 0.8 mA VDD1=VDD2=5V±10%; All Input 0V for NSI8021x0 Or All Input at supply for NSI8021x1 4
Supply current IDD1(Q1) IDD1(Q1) 1.4 mA VDD1=VDD2=5V±10%; All Input at supply for NSI8021x0 Or All Input 0V for NSI8021x1 4
Supply current IDD2(Q1) IDD2(Q1) 1.4 mA VDD1=VDD2=5V±10%; All Input at supply for NSI8021x0 Or All Input 0V for NSI8021x1 4
Supply current IDD1(0.5M) IDD1(0.5M) 1.25 mA VDD1=VDD2=5V±10%; All Input with 500kbps, CL=15pF 4
Supply current IDD2(0.5M) IDD2(0.5M) 1.25 mA VDD1=VDD2=5V±10%; All Input with 500kbps, CL=15pF 4
Minimum Pulse Width PW 50 ns VDD1=VDD2=5V±10%, Ta=-40℃ to 125℃ 4
Propagation Delay tPLH tPLH 30 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=5V±10% 4
Propagation Delay tPHL tPHL 30 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=5V±10% 4
Pulse Width Distortion /tPHL, tPLH/ PWD 10 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=5V±10% 4
Rising Time tr 5 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=5V±10% 4
Falling Time tf 5 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=5V±10% 4
Peak Eye Diagram Jitter tJIT(PK) 350 ps VDD1=VDD2=5V±10% 4
Channel-to-Channel Delay Skew tSK(c2c) 10 ns VDD1=VDD2=5V±10% 4
Part-to-Part Delay Skew tSK(p2p) 10 ns VDD1=VDD2=5V±10% 4
Supply current IDD1(Q0) IDD1(Q0) 0.77 mA VDD1=VDD2=3.3V±10%; All Input 0V for NSI8021x0 Or All Input at supply for NSI8021x1 5
Supply current IDD2(Q0) IDD2(Q0) 0.77 mA VDD1=VDD2=3.3V±10%; All Input 0V for NSI8021x0 Or All Input at supply for NSI8021x1 5
Supply current IDD1(Q1) IDD1(Q1) 1.35 mA VDD1=VDD2=3.3V±10%; All Input at supply for NSI8021x0 Or All Input 0V for NSI8021x1 5
Supply current IDD2(Q1) IDD2(Q1) 1.35 mA VDD1=VDD2=3.3V±10%; All Input at supply for NSI8021x0 Or All Input 0V for NSI8021x1 5
Supply current IDD1(0.5M) IDD1(0.5M) 1.11 mA VDD1=VDD2=3.3V±10%; All Input with 500kbps, CL = 15pF 5
Supply current IDD2(0.5M) IDD2(0.5M) 1.11 mA VDD1=VDD2=3.3V±10%; All Input with 500kbps, CL = 15pF 5
Propagation Delay tPLH tPLH 30 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=3.3V±10% 5
Propagation Delay tPHL tPHL 30 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=3.3V±10% 5
Pulse Width Distortion /tPHL, tPLH/ PWD 10 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=3.3V±10% 5
Part-to-Part Delay Skew tSK(p2p) 10 ns VDD1=VDD2=3.3V±10% 5
Supply current IDD1(Q0) IDD1(Q0) 0.75 mA VDD1=VDD2=2.5V±10%; All Input 0V for NSI8021x0 Or All Input at supply for NSI8021x1 6
Supply current IDD2(Q0) IDD2(Q0) 0.75 mA VDD1=VDD2=2.5V±10%; All Input 0V for NSI8021x0 Or All Input at supply for NSI8021x1 6
Supply current IDD1(Q1) IDD1(Q1) 1.33 mA VDD1=VDD2=2.5V±10%; All Input at supply for NSI8021x0 Or All Input 0V for NSI8021x1 6
Supply current IDD2(Q1) IDD2(Q1) 1.33 mA VDD1=VDD2=2.5V±10%; All Input at supply for NSI8021x0 Or All Input 0V for NSI8021x1 6
Supply current IDD1(0.5M) IDD1(0.5M) 1.08 mA VDD1=VDD2=2.5V±10%; All Input with 500kbps, CL = 15pF 6
Supply current IDD2(0.5M) IDD2(0.5M) 1.08 mA VDD1=VDD2=2.5V±10%; All Input with 500kbps, CL = 15pF 6
Minimum Pulse Width PW 50 ns VDD1=VDD2=2.5V±10% 6
Propagation Delay tPLH tPLH 440 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=2.5V±10% 6
Propagation Delay tPHL tPHL 440 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=2.5V±10% 6
Pulse Width Distortion /tPHL, tPLH/ PWD 10 ns See Figure 2.7, CL = 15pF; VDD1=VDD2=2.5V±10% 6
Part-to-Part Delay Skew tSK(p2p) 5 ns VDD1=VDD2=2.5V±10% 6

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing pC In accordance with DIN VDE V 0884-11, each NSI8020N/NSI8021N is proof tested by applying an insulation test voltage ≥ 847 V peak for 1 sec (partial discharge detection limit = 5 pC). The * marking bra 9

CAD (KiCad official)

  • Symbol: NSI8021N1-DSPR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: nsi8021n1-dspr-etched.step / nsi8021n1-dspr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nsi8021n1-dspr.step / nsi8021n1-dspr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: NOVOSENSE datasheet (14 pp, sha256 b574019b05ce7a98, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF