component
HSCC8211
Public Made by Adomby adom
HUASHUO MOSFETs, DFN-6-EP(3x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSCC8211
HUASHUO · MOSFETs · DFN-6-EP(3x2)
HSCC8211 from HUASHUO, in a DFN-6-EP(3x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1, marked by the pin-1 dot and chamfer). |
| 2 | S1 | passive | Source of MOSFET 1, tied to pin 1. |
| 3 | G1 | input | Gate of MOSFET 1 with embedded ESD protection; VGS rating is ±12 V. |
| 4 | G2 | input | Gate of MOSFET 2 with embedded ESD protection; VGS rating is ±12 V. |
| 5 | S2 | passive | Source of MOSFET 2. |
| 6 | S2 | passive | Source of MOSFET 2, tied to pin 5. |
| 7 | D1/D2 | passive | Exposed pad, common drain of both MOSFETs (VDS 20 V max, ID 8 A at TA=25℃). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | DFN-6-EP(3x2) |
| Category | Transistors |
| Pins | 7 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 9 | 13 | mΩ | VGS=4.5V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 9.5 | 13.5 | mΩ | VGS=4.0V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 10 | 14.5 | mΩ | VGS=3.7V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 11 | 16.5 | mΩ | VGS=3.1V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 12.5 | 20 | mΩ | VGS=2.5V, ID=2A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.6 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | uA | VGS=±8V, VDS=0V | 2 | |
| Continuous Source Current | IS | 8 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 50 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=8.0A, TJ=25℃ | 2 | ||
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 8 | A | TA=25℃, VGS @ 4.5V | 1 | ||
| Continuous Drain Current | ID | 6.4 | A | TA=70℃, VGS @ 4.5V | 1 | ||
| Pulsed Drain Current | IDM | 50 | A | 1 | |||
| Total Power Dissipation | PD | 1.56 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 80 | ℃/W | t ≤10s | 1 | ||
| Forward Transconductance | gfs | 32 | S | VDS=5V, ID=4A | 2 | ||
| Total Gate Charge (4.5V) | Qg | 10.6 | nC | VDS=15V, VGS=4.5V, ID=3A | 2 | ||
| Gate-Source Charge | Qgs | 2.2 | nC | VDS=15V, VGS=4.5V, ID=3A | 2 | ||
| Gate-Drain Charge | Qgd | 4.1 | nC | VDS=15V, VGS=4.5V, ID=3A | 2 | ||
| Turn-On Delay Time | Td(on) | 7 | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 | ||
| Rise Time | Tr | 36 | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 | ||
| Turn-Off Delay Time | Td(off) | 46.5 | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 | ||
| Fall Time | Tf | 15 | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 | ||
| Input Capacitance | Ciss | 735 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 83 | pF | VDS=10V, VGS=0V, f=1MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 81 | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
CAD (KiCad official)
- Symbol:
HSCC8211 - Footprint:
Package_DFN_QFN:DFN-6-1EP_3x2mm_P0.5mm_EP1.65x1.35mm - 3D model: DFN-6-EP(3x2), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
hscc8211-etched.step/hscc8211-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hscc8211.step/hscc8211.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
0101485f29328230, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).