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HSCC8211

HUASHUO · MOSFETs · DFN-6-EP(3x2)

HSCC8211 from HUASHUO, in a DFN-6-EP(3x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (pin 1, marked by the pin-1 dot and chamfer).
2 S1 passive Source of MOSFET 1, tied to pin 1.
3 G1 input Gate of MOSFET 1 with embedded ESD protection; VGS rating is ±12 V.
4 G2 input Gate of MOSFET 2 with embedded ESD protection; VGS rating is ±12 V.
5 S2 passive Source of MOSFET 2.
6 S2 passive Source of MOSFET 2, tied to pin 5.
7 D1/D2 passive Exposed pad, common drain of both MOSFETs (VDS 20 V max, ID 8 A at TA=25℃).

Key specifications

Parameter Value
Manufacturer HUASHUO
Package DFN-6-EP(3x2)
Category Transistors
Pins 7

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 7 9 13 mΩ VGS=4.5V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 7.5 9.5 13.5 mΩ VGS=4.0V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 8 10 14.5 mΩ VGS=3.7V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 8.5 11 16.5 mΩ VGS=3.1V, ID=2A 2
Static Drain-Source On-Resistance RDS(ON) 9.5 12.5 20 mΩ VGS=2.5V, ID=2A 2
Gate Threshold Voltage VGS(th) 0.5 0.6 1.2 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=16V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=16V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -10 10 uA VGS=±8V, VDS=0V 2
Continuous Source Current IS 8 A VG=VD=0V, Force Current 2
Pulsed Source Current ISM 50 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8.0A, TJ=25℃ 2
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 8 A TA=25℃, VGS @ 4.5V 1
Continuous Drain Current ID 6.4 A TA=70℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 50 A 1
Total Power Dissipation PD 1.56 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 80 ℃/W t ≤10s 1
Forward Transconductance gfs 32 S VDS=5V, ID=4A 2
Total Gate Charge (4.5V) Qg 10.6 nC VDS=15V, VGS=4.5V, ID=3A 2
Gate-Source Charge Qgs 2.2 nC VDS=15V, VGS=4.5V, ID=3A 2
Gate-Drain Charge Qgd 4.1 nC VDS=15V, VGS=4.5V, ID=3A 2
Turn-On Delay Time Td(on) 7 ns VDD=15V, VGS=4.5V, RG=6, ID=3A 2
Rise Time Tr 36 ns VDD=15V, VGS=4.5V, RG=6, ID=3A 2
Turn-Off Delay Time Td(off) 46.5 ns VDD=15V, VGS=4.5V, RG=6, ID=3A 2
Fall Time Tf 15 ns VDD=15V, VGS=4.5V, RG=6, ID=3A 2
Input Capacitance Ciss 735 pF VDS=10V, VGS=0V, f=1MHz 2
Output Capacitance Coss 83 pF VDS=10V, VGS=0V, f=1MHz 2
Reverse Transfer Capacitance Crss 81 pF VDS=10V, VGS=0V, f=1MHz 2

CAD (KiCad official)

  • Symbol: HSCC8211
  • Footprint: Package_DFN_QFN:DFN-6-1EP_3x2mm_P0.5mm_EP1.65x1.35mm
  • 3D model: DFN-6-EP(3x2), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
  • 3D model files: hscc8211-etched.step / hscc8211-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hscc8211.step / hscc8211.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 0101485f29328230, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF