# HSCC8211

**HUASHUO** · MOSFETs · DFN-6-EP(3x2)

HSCC8211 from HUASHUO, in a DFN-6-EP(3x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (pin 1, marked by the pin-1 dot and chamfer). |
| 2 | S1 | passive | Source of MOSFET 1, tied to pin 1. |
| 3 | G1 | input | Gate of MOSFET 1 with embedded ESD protection; VGS rating is ±12 V. |
| 4 | G2 | input | Gate of MOSFET 2 with embedded ESD protection; VGS rating is ±12 V. |
| 5 | S2 | passive | Source of MOSFET 2. |
| 6 | S2 | passive | Source of MOSFET 2, tied to pin 5. |
| 7 | D1/D2 | passive | Exposed pad, common drain of both MOSFETs (VDS 20 V max, ID 8 A at TA=25℃). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | DFN-6-EP(3x2) |
| Category | Transistors |
| Pins | 7 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 20 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 9 | 13 | mΩ | VGS=4.5V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 7.5 | 9.5 | 13.5 | mΩ | VGS=4.0V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 10 | 14.5 | mΩ | VGS=3.7V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 11 | 16.5 | mΩ | VGS=3.1V, ID=2A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 12.5 | 20 | mΩ | VGS=2.5V, ID=2A | 2 |
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.6 | 1.2 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=16V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current | IDSS |  |  | 5 | uA | VDS=16V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current | IGSS | -10 |  | 10 | uA | VGS=±8V, VDS=0V | 2 |
| Continuous Source Current | IS |  |  | 8 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM |  |  | 50 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=8.0A, TJ=25℃ | 2 |
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 8 | A | TA=25℃, VGS @ 4.5V | 1 |
| Continuous Drain Current | ID |  |  | 6.4 | A | TA=70℃, VGS @ 4.5V | 1 |
| Pulsed Drain Current | IDM |  |  | 50 | A |  | 1 |
| Total Power Dissipation | PD |  |  | 1.56 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 80 | ℃/W | t ≤10s | 1 |
| Forward Transconductance | gfs |  | 32 |  | S | VDS=5V, ID=4A | 2 |
| Total Gate Charge (4.5V) | Qg |  | 10.6 |  | nC | VDS=15V, VGS=4.5V, ID=3A | 2 |
| Gate-Source Charge | Qgs |  | 2.2 |  | nC | VDS=15V, VGS=4.5V, ID=3A | 2 |
| Gate-Drain Charge | Qgd |  | 4.1 |  | nC | VDS=15V, VGS=4.5V, ID=3A | 2 |
| Turn-On Delay Time | Td(on) |  | 7 |  | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 |
| Rise Time | Tr |  | 36 |  | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 |
| Turn-Off Delay Time | Td(off) |  | 46.5 |  | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 |
| Fall Time | Tf |  | 15 |  | ns | VDD=15V, VGS=4.5V, RG=6, ID=3A | 2 |
| Input Capacitance | Ciss |  | 735 |  | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Output Capacitance | Coss |  | 83 |  | pF | VDS=10V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 81 |  | pF | VDS=10V, VGS=0V, f=1MHz | 2 |

## CAD (KiCad official)

- Symbol: `HSCC8211`
- Footprint: `Package_DFN_QFN:DFN-6-1EP_3x2mm_P0.5mm_EP1.65x1.35mm`
- 3D model: DFN-6-EP(3x2), generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.9 mm nominal QFN height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `hscc8211-etched.step` / `hscc8211-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `hscc8211.step` / `hscc8211.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUASHUO datasheet](docs/hscc8211-datasheet.pdf) (6 pp, sha256 `0101485f29328230`, retrieved 2026-10-22, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/hscc8211-datasheet.pdf)