component
WM03N58M
Public Made by Adomby adom
Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownWM03N58M
Wayon · MOSFETs · SOT-23
WM03N58M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the gate-source voltage is rated at ±12 V absolute maximum, with a threshold of 0.7 V min to 1.4 V max at 250 µA. |
| 2 | S | passive | Source; the body diode continuous source current is 5.8 A max, with a forward voltage of 1.3 V max at IS = 1 A. |
| 3 | D | passive | Drain; the drain-source voltage is rated at 30 V, with a continuous drain current of 5.8 A and a pulsed drain current of 22 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wayon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 5.8 | A | TC=25°C | 1 | ||
| Pulsed Drain Current | IDM | 22 | A | 1 | |||
| Power Dissipation | PD | 1.2 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 104 | °C/W | Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 2) | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS =30V, VGS = 0V | 2 | ||
| Gate-body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±12V | 2 | |
| Gate Threshold Voltage | VGS(th) | 0.7 | 1.4 | V | VGS= 0V, ID = 250µA | 2 | |
| Drain-Source on-state Resistance (VGS = 10V, ID = 5.8A) | RDS(on) | 23 | 35 | mΩ | VGS = 10V, ID = 5.8A | 2 | |
| Drain-Source on-state Resistance (VGS = 4.5V, ID = 5A) | RDS(on) | 26 | 40 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Drain-Source on-state Resistance (VGS = 2.5V, ID = 4A) | RDS(on) | 40 | 52 | mΩ | VGS = 2.5V, ID = 4A | 2 | |
| Body Diode Voltage | VSD | 1.3 | V | IS=1A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 5.8 | A | 2 |
CAD (KiCad official)
- Symbol:
WM03N58M - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
wm03n58m-etched.step/wm03n58m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wm03n58m.step/wm03n58m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wayon datasheet (5 pp, sha256
b3cddf47ea3a41a5, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).