component

WM03N58M

Public Made by Adom

by adom

Wayon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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README.md Publish 0.1.0 · Ray 23d ago
wm03n58m-etched.glb Publish 0.1.0 · Ray 23d ago
wm03n58m-etched.step wm03n58m: factory component page (tier=lcsc) · Ray 23d ago
wm03n58m-hero.glb wm03n58m: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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wm03n58m.glb Publish 0.1.0 · Ray 23d ago
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WM03N58M

Wayon · MOSFETs · SOT-23

WM03N58M from Wayon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; the gate-source voltage is rated at ±12 V absolute maximum, with a threshold of 0.7 V min to 1.4 V max at 250 µA.
2 S passive Source; the body diode continuous source current is 5.8 A max, with a forward voltage of 1.3 V max at IS = 1 A.
3 D passive Drain; the drain-source voltage is rated at 30 V, with a continuous drain current of 5.8 A and a pulsed drain current of 22 A.

Key specifications

Parameter Value
Manufacturer Wayon
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID 5.8 A TC=25°C 1
Pulsed Drain Current IDM 22 A 1
Power Dissipation PD 1.2 W 1
Operating Junction and Storage Temperature Range TJ ,TSTG -55 150 °C 1
Thermal Resistance from Junction to Ambient RθJA 104 °C/W Surface mounted on 1 inch2 FR-4 board, 2OZ copper (note 2) 1
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS =30V, VGS = 0V 2
Gate-body Leakage Current IGSS -100 100 nA VDS = 0V, VGS = ±12V 2
Gate Threshold Voltage VGS(th) 0.7 1.4 V VGS= 0V, ID = 250µA 2
Drain-Source on-state Resistance (VGS = 10V, ID = 5.8A) RDS(on) 23 35 mΩ VGS = 10V, ID = 5.8A 2
Drain-Source on-state Resistance (VGS = 4.5V, ID = 5A) RDS(on) 26 40 mΩ VGS = 4.5V, ID = 5A 2
Drain-Source on-state Resistance (VGS = 2.5V, ID = 4A) RDS(on) 40 52 mΩ VGS = 2.5V, ID = 4A 2
Body Diode Voltage VSD 1.3 V IS=1A, VGS = 0V 2
Continuous Source Current IS 5.8 A 2

CAD (KiCad official)

  • Symbol: WM03N58M
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: wm03n58m-etched.step / wm03n58m-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wm03n58m.step / wm03n58m.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wayon datasheet (5 pp, sha256 b3cddf47ea3a41a5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF