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Contents

README

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NCP81258MNTBG

onsemi · Gate Drive ICs · DFN-8-EP(2x2)

NCP81258MNTBG from onsemi, in a DFN-8-EP(2x2). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BST power_out Floating bootstrap supply for the high-side gate driver; the external bootstrap capacitor (MLCC greater than 100 nF) connects between BST and SW, and BST is rated -0.3 V to 35 V with respect to GND.
2 PWM input Three-state PWM control input: above PWMHI (3.4 V) drives DRVH high, below PWMLO (0.7 V) drives DRVL high, and the mid-state range PWMMID (1.3 V to 2.7 V) enables zero-current detection; the absolute maximum rating is -0.3 V to 6.5 V.
3 EN bidirectional Bi-directional enable: EN above ENHI (2.0 V) enables the driver and EN below ENLO (1.0 V) disables DRVH and DRVL, and a UVLO fault pulls this pin low to signal the controller; the absolute maximum rating is -0.3 V to 6.5 V.
4 VCC power_in Main supply input with an operating range of 4.5 V to 13.2 V and an absolute maximum of 15 V (16 V for less than 50 ns), requiring a 1 µF bypass capacitor to GND.
5 DRVL output Low-side gate drive output for the low-side MOSFET, rated -0.3 V to VCC + 0.3 V (15 V for less than 80 ns).
6 GND power_in Bias and reference ground for all signals on the device.
7 SW passive Switch node connected to the source of the high-side MOSFET and the drain of the low-side MOSFET, rated -5 V (-10 V for less than 200 ns) to 35 V (40 V for less than 50 ns).
8 DRVH output High-side gate drive output for the high-side MOSFET, rated -0.3 V to BST + 0.3 V with respect to SW (-2 V for less than 200 ns).
9 FLAG passive Thermal flag (exposed pad) with no electrical connection to the IC; it must be connected to the ground plane.

Key specifications

Parameter Value
Manufacturer onsemi
Package DFN-8-EP(2x2)
Category Power Management ICs
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Main Supply Voltage VCC -0.3 15 V Note 1; 16 V (< 50 ns) 3
Bootstrap Supply Voltage BST -0.3 35 V min wrt/SW; max wrt/GND; 40 V (50 ns) wrt/GND; 15 V wrt/SW 3
Switch Node Voltage SW -5 35 V −10 V (200 ns); 40 V (50 ns) 3
High-Side Driver Output DRVH -0.3 V min wrt/SW; max BST + 0.3 V wrt/SW; −2 V (200 ns) wrt/SW; SW + 15 V (80 ns) 3
Low-Side Driver Output DRVL -0.3 V max VCC + 0.3 V; −5 V (200 ns); 15 V (80 ns) 3
DRVH/DRVL Control Input, Enable Pin PWM, EN -0.3 6.5 V 3
Ground GND 0 0 V 3
Storage Temperature Range TSTG -55 150 °C 3
Operating Junction Temperature Range TJ -40 150 °C 3
Input Voltage VCC 4.5 13.2 V 3
Ambient Temperature TA -10 125 °C 3
VCC Operation Voltage 4.5 13.2 V 4
Pre-OVP VCC Threshold 2.75 3.2 V 4
VCC Start Threshold VUVLO 3.8 4.35 4.5 V VCC rising 4
VCC UVLO Hysteresis VUVLO_HYS 150 200 250 mV 4
Output Overvoltage Trip Threshold at Startup 2.1 2.25 2.4 V VCC > Pre−OVP VCC Threshold 4
Bootstrap Diode Forward Voltage 0.1 0.4 0.6 V VCC = 12 V, Forward bias current = 2 mA 4
PWM Mid-State PWMMID 1.3 2.7 V 4
PWM Input Low PWMLO 0.7 V 4
PWM Input High PWMHI 3.4 V 4
Normal Mode Supply Current Inormal 12.2 mA ICC + IBST, EN = 5 V, PWM = 100 kHz, CLOAD = 3 nF for DRVH, 3 nF for DRVL 4
Shutdown Mode Supply Current Ishutdown 0.5 1.9 mA ICC + IBST, EN = GND 4
Standby Current 1 Istandby1 2.1 mA ICC + IBST, EN = 5 V, PWM = 0 V, no loading on DRVH & DRVL 4
Standby Current 2 Istandby2 2.2 mA ICC + IBST, EN = 5 V, PWM = 5 V, no loading on DRVH & DRVL 4
DRVH Output Impedance, Sourcing Current 2 3.5 Ω (VBST, VSW) = 12 V 4
DRVH Output Impedance, Sinking Current 1 2 Ω (VBST, VSW) = 12 V 4
DRVH Rise Time trDRVH 16 30 ns VCC = 12 V, 3 nF load, (VBST, VSW) = 12 V 4
DRVH Fall Time tfDRVH 11 25 ns VCC = 12 V, 3 nF load, (VBST, VSW) = 12 V 4
DRVH Turn-Off Propagation Delay tpdlDRVH 8 30 ns Cload = 3 nF, [PWM = PWMLO] to [VDRVH = 90%] 4
Enable Voltage High ENHI 2 V 5
Enable Voltage Low ENLO 1 V 5
Normal Bias Current -1 1 µA 5
Enable Pin Sink Current 4 30 mA 5
DRVL Output Impedance, Sourcing Current 2 3.5 Ω VCC = 12 V 5
DRVL Output Impedance, Sinking Current 0.7 1.8 Ω VCC = 12 V 5
DRVL Rise Time trDRVL 16 35 ns VCC = 12 V, CLOAD = 3 nF 5
DRVL Fall Time tfDRVL 11 20 ns VCC = 12 V, CLOAD = 3 nF 5
DRVL Turn-Off Propagation Delay tpdlDRVL 35 ns CLOAD = 3 nF, [PWM = PWMHI] to [VDRVL = 90%] 5
DRVL Turn-On Propagation Delay tpdhDRVL 8 30 ns CLOAD = 3 nF, [VDRVH−VSW] = 1 V to [VDRVL = 10%] 5
DRVH Turn-On Propagation Delay tpdhDRVH 30 ns Cload = 3 nF, [VDRVL = 1 V] to [VDRVH−VSW = 10%] 4
HS SW Pull-down Resistance (VCC = 12 V) 37.5 k SW to PGND 4
HS DRVH Pull-down Resistance (VCC = 12 V) 37.5 k DRVH to SW, (VBST, VSW) = 0 V 4
HS DRVH Output Impedance, Sourcing Current (VCC = 5 V) 2.5 Ω (VBST, VSW) = 5 V 4
HS DRVH Output Impedance, Sinking Current (VCC = 5 V) 1.6 Ω (VBST, VSW) = 5 V 4
DRVH Rise Time (VCC = 5 V) trDRVL 30 ns VCC = 5 V, 3 nF load, (VBST, VSW) = 5 V 4
DRVH Fall Time (VCC = 5 V) tfDRVL 27 ns VCC = 5 V, 3 nF load, (VBST, VSW) = 5 V 4
DRVH Turn-Off Propagation Delay (VCC = 5 V) tpdlDRVL 20 ns CLOAD = 3 nF, [PWM = PWMLO] to [VDRVH = 90%] 4
DRVH Turn-On Propagation Delay (VCC = 5 V) tpdhDRVL 27 ns CLOAD = 3 nF, [VDRVL = 1 V] to [VDRVH−VSW = 10%] 4
LS Output Impedance, Sourcing Current (VCC = 5 V) 2.5 Ω VCC = 5 V 5
LS Output Impedance, Sinking Current (VCC = 5 V) 1 Ω VCC = 5 V 5
DRVL Rise Time (VCC = 5 V) trDRVL 30 ns VCC = 5 V, CLOAD = 3 nF 5
DRVL Fall Time (VCC = 5 V) tfDRVL 22 ns VCC = 5 V, CLOAD = 3 nF 5
DRVL Turn-Off Propagation Delay (VCC = 5 V) tpdlDRVL 27 ns CLOAD = 3 nF, [PWM = PWMHI] to [VDRVL = 90%] 5
DRVL Turn-On Propagation Delay (VCC = 5 V) tpdhDRVL 12 ns CLOAD = 3 nF, [VDRVH−VSW = 1 V] to [VDRVL = 10%] 5
DRVL Pull-down Resistance (VCC = 12 V) 37.5 k DRVL to GND, VCC = GND 5
EN Hysteresis 500 mV 5
EN High Propagation Delay Time tpdEN_HI 60 µs PWM = 0 V, EN going from 0 V to ENHI to DRVL rising to 10% 5
SW Node Leakage Current 20 µA 5
Thermal Resistance, Junction-to-Air RθJA 74 °C/W DFN8 2x2 mm; copper area 645 mm2 (1 in2), 1 oz copper, FR4 PCB (Note 2) 3

CAD (KiCad official)

  • Symbol: NCP81258MNTBG
  • Footprint: Package_DFN_QFN:DFN-8-1EP_2x2mm_P0.5mm_EP0.6x1.2mm
  • 3D model: DFN-8-EP(2x2) (KiCad packages3D, STEP)
  • 3D model files: ncp81258mntbg-etched.step / ncp81258mntbg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncp81258mntbg.step / ncp81258mntbg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (10 pp, sha256 98abd7123d7e1d31, retrieved 2026-10-29, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF