component
NTS4173PT1G
Public Made by Adomby adom
onsemi MOSFETs, SC-70-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNTS4173PT1G
onsemi · MOSFETs · SC-70-3
NTS4173PT1G from onsemi, in a SC-70-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the P-channel MOSFET, with gate-to-source voltage rated ±12 V (VGS). |
| 2 | Source | passive | Source of the MOSFET, with body-diode source current IS rated −1.0 A. |
| 3 | Drain | passive | Drain of the MOSFET, rated −30 V drain-to-source (VDSS) with continuous drain current of −1.2 A at TA = 25°C (steady state). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SC-70-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | -30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -12 | 12 | V | Printed as ±12 V | 1 | |
| Continuous Drain Current | ID | -1.2 | A | Steady state, TA = 25°C (Note 1) | 1 | ||
| Continuous Drain Current | ID | -0.8 | A | Steady state, TA = 85°C (Note 1) | 1 | ||
| Continuous Drain Current | ID | -1.3 | A | t ≤ 5 s, TA = 25°C (Note 1) | 1 | ||
| Power Dissipation | PD | 0.29 | W | Steady state, TA = 25°C (Note 1) | 1 | ||
| Power Dissipation | PD | 0.35 | W | t ≤ 5 s (Note 1) | 1 | ||
| Pulsed Drain Current | IDM | -5 | A | tp = 10 s | 1 | ||
| Operating Junction and Storage Temperature | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Source Current (Body Diode) | IS | -1 | A | 1 | |||
| Lead Temperature for Soldering Purposes | TL | 260 | °C | 1/8″ from case for 10 s | 1 | ||
| Junction-to-Ambient Thermal Resistance, Steady State | RJA | 425 | °C/W | Steady state (Note 1) | 1 | ||
| Junction-to-Ambient Thermal Resistance, t ≤ 5 s | RJA | 360 | °C/W | t ≤ 5 s (Note 1) | 1 | ||
| Drain-to-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS = 0 V, ID = −250 A | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | A | VGS = 0 V, VDS = −24 V, TJ = 25°C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | A | VGS = 0 V, VDS = −24 V, TJ = 85°C | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -0.1 | 0.1 | A | VDS = 0 V, VGS = 12 V | 2 | |
| Gate Threshold Voltage | VGS(TH) | -0.7 | -1.15 | -1.5 | V | VGS = VDS, ID = −250 A | 2 |
| Drain-to-Source On-Resistance | RDS(on) | 90 | 150 | m | VGS = −10 V, ID = −1.2 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 110 | 200 | m | VGS = −4.5 V, ID = −1.0 A | 2 | |
| Drain-to-Source On-Resistance | RDS(on) | 165 | 280 | m | VGS = −2.5 V, ID = −0.9 A | 2 | |
| Forward Diode Voltage | VSD | -0.8 | -1 | V | VGS = 0 V, IS = −1.0 A | 2 |
CAD (KiCad official)
- Symbol:
NTS4173PT1G - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SC-70-3 (KiCad packages3D, STEP)
- 3D model files:
nts4173pt1g-etched.step/nts4173pt1g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nts4173pt1g.step/nts4173pt1g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (7 pp, sha256
3be633522bd32557, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).