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SI1427EDH-T1-GE3

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Vishay Intertech MOSFETs, SOT-363-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Contents

README

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SI1427EDH-T1-GE3

Vishay Intertech · MOSFETs · SOT-363-6

SI1427EDH-T1-GE3 from Vishay Intertech, in a SOT-363-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain of the P-channel MOSFET, tied internally with pins 2, 5 and 6; VDS rated -20 V.
2 D passive Drain of the P-channel MOSFET, tied internally with pins 1, 5 and 6; continuous drain current -2 A (package limited).
3 G input Gate of the P-channel MOSFET with built-in Zener ESD protection; VGS rated ±8 V.
4 S passive Source of the P-channel MOSFET; continuous source-drain diode current -2 A at TC = 25 °C.
5 D passive Drain of the P-channel MOSFET, tied internally with pins 1, 2 and 6; pulsed drain current -8 A.
6 D passive Drain of the P-channel MOSFET, tied internally with pins 1, 2 and 5; four drain leads reduce on-resistance and thermal resistance.

Key specifications

Parameter Value
Manufacturer Vishay Intertech
Package SOT-363-6
Category Triode/MOS Tube/Transistor
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS -20 V 1
Gate-source voltage VGS -8 8 V 1
Continuous drain current ID -2 A TC = 25 °C, notes a, e 1
Pulsed drain current IDM -8 A 1
Continuous source-drain diode current IS -2 A TC = 25 °C, notes a, e 1
Continuous source-drain diode current IS -1.3 A TA = 25 °C, notes b, c 1
Maximum power dissipation PD 2.8 W TC = 25 °C 1
Maximum power dissipation PD 1.8 W TC = 70 °C 1
Maximum power dissipation PD 1.56 W TA = 25 °C, notes b, c 1
Maximum power dissipation PD 1 W TA = 70 °C, notes b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C notes d, e 1
Maximum junction-to-ambient RthJA 60 80 °C/W t ≤ 5 s, notes b, d 1
Maximum junction-to-ambient (steady state) RthJA 125 °C/W steady state, note d 1
Maximum junction-to-foot (drain) RthJF 34 45 °C/W steady state 1
Drain-source breakdown voltage VDS -20 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -0.4 -1 V VDS = VGS, ID = -250 μA 2
Gate-source leakage IGSS -6 6 μA VDS = 0 V, VGS = ± 8 V 2
Gate-source leakage IGSS -0.5 0.5 μA VDS = 0 V, VGS = ± 4.5 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -20 V, VGS = 0 V 2
Zero gate voltage drain current IDSS -10 μA VDS = -20 V, VGS = 0 V, TJ = 55 °C 2
On-state drain current ID(on) -8 A VDS -5 V, VGS = -4.5 V 2
Drain-source on-state resistance RDS(on) 0.05 0.064 Ω VGS = -4.5 V, ID = -3 A 2
Drain-source on-state resistance RDS(on) 0.065 0.085 Ω VGS = -2.5 V, ID = -2 A 2
Drain-source on-state resistance RDS(on) 0.09 0.11 Ω VGS = -1.8 V, ID = -1 A 2
Drain-source on-state resistance RDS(on) 0.11 0.165 Ω VGS = -1.5 V, ID = -0.5 A 2
Total gate charge Qg 14 21 nC VDS = -10 V, VGS = -8 V, ID = -5.3 A 2
Total gate charge Qg 7.6 12 nC VDS = -10 V, VGS = -4.5 V, ID = -5.3 A 2
Gate resistance Rg 400 2000 4000 Ω f = 1 MHz 2
Turn-on delay time td(on) 0.2 0.3 μs VDD = -10 V, RL = 2.3 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Rise time tr 1 1.5 μs VDD = -10 V, RL = 2.3 Ω, ID -4.3 A, VGEN = -4.5 V, Rg = 1 Ω 2
Turn-on delay time td(on) 0.09 0.14 μs VDD = -10 V, RL = 2.3 Ω, ID -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Rise time tr 0.4 0.6 μs VDD = -10 V, RL = 2.3 Ω, ID -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Turn-off delay time td(off) 5.2 7.8 μs VDD = -10 V, RL = 2.3 Ω, ID -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Fall time tf 2.3 3.5 μs VDD = -10 V, RL = 2.3 Ω, ID -4.3 A, VGEN = -8 V, Rg = 1 Ω 2
Continuous source-drain diode current IS -2 A TC = 25 °C 2
Pulse diode forward current ISM -8 A 2
Body diode voltage VSD -0.8 -1.2 V IS = -3 A, VGS = 0 V 2
Body diode reverse recovery time trr 30 60 ns IF = -3 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr 20 40 nC IF = -3 A, di/dt = 100 A/μs, TJ = 25 °C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper Single-Channel LITTLE FOOT SC-70 6-Pin MOSFET Copper Leadframe Version 8

CAD (KiCad official)

  • Symbol: SI1427EDH-T1-GE3
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363-6 (KiCad packages3D, STEP)
  • 3D model files: si1427edh-t1-ge3-etched.step / si1427edh-t1-ge3-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); si1427edh-t1-ge3.step / si1427edh-t1-ge3.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Vishay Intertech datasheet (12 pp, sha256 e89b71dd5d90dad5, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF