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Contents

Pinout
Key specifications
Electrical characteristics
CAD (KiCad official)
Provenance

README

markdown

ZTX658

Diodes Incorporated · Bipolar (BJT) · TO-92

ZTX658 from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	E	passive	Emitter; Emitter-Base voltage max 5 V (VEBO), operating and storage temperature -55 to +200 °C.
2	B	passive	Base; drive for the NPN transistor, e.g. IB = 10mA for IC = 100mA saturation (VBE(sat) max 0.9 V).
3	C	passive	Collector; VCEO and VCBO max 400 V, continuous collector current 500 mA (peak 1 A).

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	TO-92
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Base Voltage	VCBO			400	V		1
Collector-Emitter Voltage	VCEO			400	V		1
Emitter-Base Voltage	VEBO			5	V		1
Peak Pulse Current	ICM			1	A		1
Continuous Collector Current	IC			500	mA		1
Power Dissipation	Ptot			1	W	Tamb = +25°C	1
Power Dissipation Derating	Ptot			5.7	mW/°C	Derate above +25°C	1
Operating and Storage Temperature Range	TJ, TSTG	-55		200	°C		1
Collector-Base Breakdown Voltage	V(BR)CBO	400			V	IC = 100µA	1
Collector-Emitter Breakdown Voltage	V(BR)CEO	400			V	IC = 10mA (Note 1)	1
Emitter-Base Breakdown Voltage	V(BR)EBO	5			V	IE = 100µA	1
Collector Cutoff Current	ICBO			100	nA	VCB = 320V	1
Emitter Cutoff Current	IEBO			100	nA	VEB = 4V	1
Collector-Emitter Saturation Voltage	VCE(sat)			0.3	V	IC = 20mA, IB = 1mA	1
Collector-Emitter Saturation Voltage	VCE(sat)			0.25	V	IC = 50mA, IB = 5mA (Note 1)	1
Collector-Emitter Saturation Voltage	VCE(sat)			0.5	V	IC = 100mA, IB = 10mA (Note 1)	1
Base-Emitter Saturation Voltage	VBE(sat)			0.9	V	IC = 100mA, IB = 10mA (Note 1)	1
Base-Emitter Turn-On Voltage	VBE(on)			0.9	V	IC = 100mA, VCE = 5V (Note 1)	1
Static Forward Current Transfer Ratio	hFE	50				IC = 1mA, VCE = 5V (Note 1)	1
Static Forward Current Transfer Ratio	hFE	40				IC = 200mA, VCE = 10V (Note 1)	1
Transition Frequency	fT	50			MHz	IC = 20mA, VCE = 20V, f = 20MHz	1
Output Capacitance	Cobo			10	pF	VCB = 20V, f = 1MHz	1
Turn-On Time	ton		130		ns	IC = 100mA, VC = 100V, IB1 = 10mA, IB2 = -20mA	1
Turn-Off Time	toff		3300		ns	IC = 100mA, VC = 100V, IB1 = 10mA, IB2 = -20mA	1
Thermal Resistance Junction to Ambient	Rth(j-amb)1			175	°C/W		2
Thermal Resistance Junction to Ambient	Rth(j-amb)2			116	°C/W	Device mounted on PCB with copper equal to 1 sq. inch minimum (Note 2)	2
Thermal Resistance Junction to Case	Rth(j-case)			70	°C/W		2

CAD (KiCad official)

Symbol: ZTX658
Footprint: Package_TO_SOT_THT:TO-92_Inline
3D model: TO-92 (KiCad packages3D, STEP)
3D model files: ztx658-etched.step / ztx658-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx658.step / ztx658.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (5 pp, sha256 d31c9e612c9f5c72, retrieved 2026-10-22, tier: manufacturer)
Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF