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ZTX658

Public Made by Adom

by adom

Diodes Incorporated Bipolar (BJT), TO-92. Pinout settled in review by an AI reviewer against the manufacturer's datasheet, KiCad symbol/footprint/3D.

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Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
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ZTX658

Diodes Incorporated · Bipolar (BJT) · TO-92

ZTX658 from Diodes Incorporated, in a TO-92. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E passive Emitter; Emitter-Base voltage max 5 V (VEBO), operating and storage temperature -55 to +200 °C.
2 B passive Base; drive for the NPN transistor, e.g. IB = 10mA for IC = 100mA saturation (VBE(sat) max 0.9 V).
3 C passive Collector; VCEO and VCBO max 400 V, continuous collector current 500 mA (peak 1 A).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TO-92
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 400 V 1
Collector-Emitter Voltage VCEO 400 V 1
Emitter-Base Voltage VEBO 5 V 1
Peak Pulse Current ICM 1 A 1
Continuous Collector Current IC 500 mA 1
Power Dissipation Ptot 1 W Tamb = +25°C 1
Power Dissipation Derating Ptot 5.7 mW/°C Derate above +25°C 1
Operating and Storage Temperature Range TJ, TSTG -55 200 °C 1
Collector-Base Breakdown Voltage V(BR)CBO 400 V IC = 100µA 1
Collector-Emitter Breakdown Voltage V(BR)CEO 400 V IC = 10mA (Note 1) 1
Emitter-Base Breakdown Voltage V(BR)EBO 5 V IE = 100µA 1
Collector Cutoff Current ICBO 100 nA VCB = 320V 1
Emitter Cutoff Current IEBO 100 nA VEB = 4V 1
Collector-Emitter Saturation Voltage VCE(sat) 0.3 V IC = 20mA, IB = 1mA 1
Collector-Emitter Saturation Voltage VCE(sat) 0.25 V IC = 50mA, IB = 5mA (Note 1) 1
Collector-Emitter Saturation Voltage VCE(sat) 0.5 V IC = 100mA, IB = 10mA (Note 1) 1
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC = 100mA, IB = 10mA (Note 1) 1
Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC = 100mA, VCE = 5V (Note 1) 1
Static Forward Current Transfer Ratio hFE 50 IC = 1mA, VCE = 5V (Note 1) 1
Static Forward Current Transfer Ratio hFE 40 IC = 200mA, VCE = 10V (Note 1) 1
Transition Frequency fT 50 MHz IC = 20mA, VCE = 20V, f = 20MHz 1
Output Capacitance Cobo 10 pF VCB = 20V, f = 1MHz 1
Turn-On Time ton 130 ns IC = 100mA, VC = 100V, IB1 = 10mA, IB2 = -20mA 1
Turn-Off Time toff 3300 ns IC = 100mA, VC = 100V, IB1 = 10mA, IB2 = -20mA 1
Thermal Resistance Junction to Ambient Rth(j-amb)1 175 °C/W 2
Thermal Resistance Junction to Ambient Rth(j-amb)2 116 °C/W Device mounted on PCB with copper equal to 1 sq. inch minimum (Note 2) 2
Thermal Resistance Junction to Case Rth(j-case) 70 °C/W 2

CAD (KiCad official)

  • Symbol: ZTX658
  • Footprint: Package_TO_SOT_THT:TO-92_Inline
  • 3D model: TO-92 (KiCad packages3D, STEP)
  • 3D model files: ztx658-etched.step / ztx658-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ztx658.step / ztx658.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (5 pp, sha256 d31c9e612c9f5c72, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF