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NCEP033N10D
Public Made by Adomby adom
Wuxi NCE Power Semiconductor MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNCEP033N10D
Wuxi NCE Power Semiconductor · MOSFETs · TO-263
NCEP033N10D from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 2.0 V min, 3.0 V typ, 4.0 V max at ID=250 µA. |
| 2 | D | passive | Drain, which is the exposed tab (middle lead is omitted in the 2L outline); VDS is rated 100 V and continuous ID is 160 A. |
| 3 | S | passive | Source; the body diode carries up to 160 A continuous (IS) with VSD of 1.2 V max at 80 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Wuxi NCE Power Semiconductor |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 100 | V | VGS=0V ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V,VGS=0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250μA | 2 |
| Drain-Source On-State Resistance (TO-263) | RDS(ON) | 2.7 | 3.3 | mΩ | VGS=10V, ID=80A | 2 | |
| Forward Transconductance | gFS | 85 | S | VDS=5V,ID=80A | 2 | ||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V,IS=80A | 2 | ||
| Diode Forward Current | IS | 160 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | TC=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC=25℃ | 1 | |
| Drain Current-Continuous | ID | 160 | A | TC=25℃ | 1 | ||
| Drain Current-Continuous (100℃) | ID (100℃) | 120 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 640 | A | TC=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 245 | W | TC=25℃ | 1 | ||
| Derating factor | 1.63 | W/℃ | 1 | ||||
| Single pulse avalanche energy | EAS | 1345 | mJ | Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 175 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 0.61 | ℃/W | Note 2 | 2 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 60 | ℃/W | Note 2 | 2 | ||
| Gate resistance | RG | 2 | Ω | 2 | |||
| Input Capacitance | Clss | 7810.5 | PF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 887.3 | PF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 30 | PF | VDS=50V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 25 | nS | VDD=50V,ID=80A VGS=10V,RG=1.6Ω | 2 | ||
| Turn-on Rise Time | tr | 15 | nS | VDD=50V,ID=80A VGS=10V,RG=1.6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 52 | nS | VDD=50V,ID=80A VGS=10V,RG=1.6Ω | 2 | ||
| Turn-Off Fall Time | tf | 17 | nS | VDD=50V,ID=80A VGS=10V,RG=1.6Ω | 2 | ||
| Total Gate Charge | Qg | 127.7 | nC | VDS=50V,ID=80A, VGS=10V | 2 | ||
| Gate-Source Charge | Qgs | 41.8 | nC | VDS=50V,ID=80A, VGS=10V | 2 | ||
| Gate-Drain Charge | Qgd | 35.5 | nC | VDS=50V,ID=80A, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 74 | nS | TJ = 25°C, IF = 80A di/dt = 100A/μs | 2 | ||
| Reverse Recovery Charge | Qrr | 164 | nC | TJ = 25°C, IF = 80A di/dt = 100A/μs | 2 |
CAD (KiCad official)
- Symbol:
NCEP033N10D - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
ncep033n10d-etched.step/ncep033n10d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ncep033n10d.step/ncep033n10d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256
4dae821958662efc, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).