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NCEP033N10D

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Wuxi NCE Power Semiconductor MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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NCEP033N10D

Wuxi NCE Power Semiconductor · MOSFETs · TO-263

NCEP033N10D from Wuxi NCE Power Semiconductor, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and threshold VGS(th) of 2.0 V min, 3.0 V typ, 4.0 V max at ID=250 µA.
2 D passive Drain, which is the exposed tab (middle lead is omitted in the 2L outline); VDS is rated 100 V and continuous ID is 160 A.
3 S passive Source; the body diode carries up to 160 A continuous (IS) with VSD of 1.2 V max at 80 A.

Key specifications

Parameter Value
Manufacturer Wuxi NCE Power Semiconductor
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS=0V ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Gate Threshold Voltage VGS(th) 2 3 4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance (TO-263) RDS(ON) 2.7 3.3 mΩ VGS=10V, ID=80A 2
Forward Transconductance gFS 85 S VDS=5V,ID=80A 2
Diode Forward Voltage VSD 1.2 V VGS=0V,IS=80A 2
Diode Forward Current IS 160 A 2
Drain-Source Voltage VDS 100 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Drain Current-Continuous ID 160 A TC=25℃ 1
Drain Current-Continuous (100℃) ID (100℃) 120 A TC=100℃ 1
Pulsed Drain Current IDM 640 A TC=25℃, Note 1 1
Maximum Power Dissipation PD 245 W TC=25℃ 1
Derating factor 1.63 W/℃ 1
Single pulse avalanche energy EAS 1345 mJ Tj=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 175 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 0.61 ℃/W Note 2 2
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W Note 2 2
Gate resistance RG 2 Ω 2
Input Capacitance Clss 7810.5 PF VDS=50V,VGS=0V, F=1.0MHz 2
Output Capacitance Coss 887.3 PF VDS=50V,VGS=0V, F=1.0MHz 2
Reverse Transfer Capacitance Crss 30 PF VDS=50V,VGS=0V, F=1.0MHz 2
Turn-on Delay Time td(on) 25 nS VDD=50V,ID=80A VGS=10V,RG=1.6Ω 2
Turn-on Rise Time tr 15 nS VDD=50V,ID=80A VGS=10V,RG=1.6Ω 2
Turn-Off Delay Time td(off) 52 nS VDD=50V,ID=80A VGS=10V,RG=1.6Ω 2
Turn-Off Fall Time tf 17 nS VDD=50V,ID=80A VGS=10V,RG=1.6Ω 2
Total Gate Charge Qg 127.7 nC VDS=50V,ID=80A, VGS=10V 2
Gate-Source Charge Qgs 41.8 nC VDS=50V,ID=80A, VGS=10V 2
Gate-Drain Charge Qgd 35.5 nC VDS=50V,ID=80A, VGS=10V 2
Reverse Recovery Time trr 74 nS TJ = 25°C, IF = 80A di/dt = 100A/μs 2
Reverse Recovery Charge Qrr 164 nC TJ = 25°C, IF = 80A di/dt = 100A/μs 2

CAD (KiCad official)

  • Symbol: NCEP033N10D
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ncep033n10d-etched.step / ncep033n10d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ncep033n10d.step / ncep033n10d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi NCE Power Semiconductor datasheet (7 pp, sha256 4dae821958662efc, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF