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Contents

README

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SK12N65B-TF

Shikues · MOSFETs · TO-220F

SK12N65B-TF from Shikues, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with absolute maximum gate-to-source voltage of ±30V and threshold of 2.0V to 4.0V.
2 D passive Drain; 650V minimum drain-to-source breakdown voltage and 12A continuous drain current.
3 S passive Source; connects to the body diode anode, with 12A continuous source current rating.

Key specifications

Parameter Value
Manufacturer Shikues
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Gate-to-Source Voltage VGSS -30 30 V 1
Continuous Drain Current ID 12 A 1
Pulsed Drain Current IDM 48 A VGS=10V 1
Single Pulse Avalanche Energy EAS 450 mJ 1
Power Dissipation (TO-220F column) PD 73 W 1
Derating Factor above 25℃ (TO-220F column) 0.58 W/℃ 1
Soldering Temperature TL 300 ℃ Distance of 1.6mm from case for 10 seconds 1
Operating and Storage Temperature Range TJ & TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case (TO-220F column) RθJC 1.71 ℃/W 1
Thermal Resistance, Junction-to-Ambient (TO-220F column) RθJA 100 ℃/W 1
Drain-to-Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250uA 2
Drain-to-Source Leakage Current IDSS 1 uA VDS=650V, VGS=0V 2
Drain-to-Source Leakage Current IDSS 100 uA VDS=520V, VGS=0V, TJ =125℃ 2
Gate-to-Source Leakage Current IGSS 100 nA VGS=+30V, VDS=0V 2
Gate-to-Source Leakage Current IGSS -100 nA VGS=-30V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 0.6 0.75 Ω VGS=10V, ID=6.0A 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250uA 2
Continuous Source Current ISD 12 A Integral pn-diode in MOSFET 3
Pulsed Source Current ISM 48 A Integral pn-diode in MOSFET 3
Diode Forward Voltage VSD 1.4 V IS=12A, VGS=0V 3

CAD (KiCad official)

  • Symbol: SK12N65B-TF
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (9 pp, sha256 70294078152933c7, retrieved 2026-11-07, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF