component
SK12N65B-TF
Public Made by Adomby adom
Shikues MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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SK12N65B-TF
Shikues · MOSFETs · TO-220F
SK12N65B-TF from Shikues, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-to-source voltage of ±30V and threshold of 2.0V to 4.0V. |
| 2 | D | passive | Drain; 650V minimum drain-to-source breakdown voltage and 12A continuous drain current. |
| 3 | S | passive | Source; connects to the body diode anode, with 12A continuous source current rating. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Gate-to-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Continuous Drain Current | ID | 12 | A | 1 | |||
| Pulsed Drain Current | IDM | 48 | A | VGS=10V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 450 | mJ | 1 | |||
| Power Dissipation (TO-220F column) | PD | 73 | W | 1 | |||
| Derating Factor above 25℃ (TO-220F column) | 0.58 | W/℃ | 1 | ||||
| Soldering Temperature | TL | 300 | ℃ | Distance of 1.6mm from case for 10 seconds | 1 | ||
| Operating and Storage Temperature Range | TJ & TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case (TO-220F column) | RθJC | 1.71 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient (TO-220F column) | RθJA | 100 | ℃/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=650V, VGS=0V | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 100 | uA | VDS=520V, VGS=0V, TJ =125℃ | 2 | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-to-Source Leakage Current | IGSS | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.6 | 0.75 | Ω | VGS=10V, ID=6.0A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250uA | 2 | |
| Continuous Source Current | ISD | 12 | A | Integral pn-diode in MOSFET | 3 | ||
| Pulsed Source Current | ISM | 48 | A | Integral pn-diode in MOSFET | 3 | ||
| Diode Forward Voltage | VSD | 1.4 | V | IS=12A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
SK12N65B-TF - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (9 pp, sha256
70294078152933c7, retrieved 2026-11-07, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).