# SK12N65B-TF

**Shikues** · MOSFETs · TO-220F

SK12N65B-TF from Shikues, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with absolute maximum gate-to-source voltage of ±30V and threshold of 2.0V to 4.0V. |
| 2 | D | passive | Drain; 650V minimum drain-to-source breakdown voltage and 12A continuous drain current. |
| 3 | S | passive | Source; connects to the body diode anode, with 12A continuous source current rating. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Gate-to-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 12 | A |  | 1 |
| Pulsed Drain Current | IDM |  |  | 48 | A | VGS=10V | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 450 | mJ |  | 1 |
| Power Dissipation (TO-220F column) | PD |  |  | 73 | W |  | 1 |
| Derating Factor above 25℃ (TO-220F column) |  |  |  | 0.58 | W/℃ |  | 1 |
| Soldering Temperature | TL |  |  | 300 | ℃ | Distance of 1.6mm from case for 10 seconds | 1 |
| Operating and Storage Temperature Range | TJ & TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case (TO-220F column) | RθJC |  |  | 1.71 | ℃/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient (TO-220F column) | RθJA |  |  | 100 | ℃/W |  | 1 |
| Drain-to-Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250uA | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 1 | uA | VDS=650V, VGS=0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 100 | uA | VDS=520V, VGS=0V, TJ =125℃ | 2 |
| Gate-to-Source Leakage Current | IGSS |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-to-Source Leakage Current | IGSS |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Static Drain-to-Source On-Resistance | RDS(ON) |  | 0.6 | 0.75 | Ω | VGS=10V, ID=6.0A | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250uA | 2 |
| Continuous Source Current | ISD |  |  | 12 | A | Integral pn-diode in MOSFET | 3 |
| Pulsed Source Current | ISM |  |  | 48 | A | Integral pn-diode in MOSFET | 3 |
| Diode Forward Voltage | VSD |  |  | 1.4 | V | IS=12A, VGS=0V | 3 |

## CAD (KiCad official)

- Symbol: `SK12N65B-TF`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Shikues datasheet](docs/sk12n65b-tf-datasheet.pdf) (9 pp, sha256 `70294078152933c7`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/sk12n65b-tf-datasheet.pdf)