component
SMT10N60
Public Made by Adomby adom
HUAKE MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSMT10N60
HUAKE · MOSFETs · TO-220F-3
SMT10N60 from HUAKE, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS=10V for the stated RDS(on), gate-source voltage limited to ±30V. |
| 2 | D | passive | Drain; 600V maximum drain-source voltage, 10.0A continuous drain current at Tc=25C, 40A pulsed. |
| 3 | S | passive | Source; connects to the body diode anode and the return for the 10.0A continuous drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 600 | V | 1 | |||
| Drain Current - Continuous | ID | 10 | A | Tc=25C | 1 | ||
| Drain Current - Continuous | ID | 6 | A | Tc=100C | 1 | ||
| Drain Current - Pulsed | IDM | 40 | A | Note 1 | 1 | ||
| Gate-Source Voltage | VGSS | -30 | 30 | V | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 713 | mJ | Note 2: L=14.5mH, IAS=10.0A, VDD=50V, RG=25 Ω, Starting TJ=25C | 1 | ||
| Avalanche Current | IAR | 10 | A | Note 1 | 1 | ||
| Repetitive Avalanche Energy | EAR | 17.8 | mJ | Note 1 | 1 | ||
| Peak Diode Recovery dv/dt | dv/dt | 4.5 | V/ns | Note 3: ISD≤10.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25C | 1 | ||
| Power Dissipation | PD | 140 | W | TC=25C | 1 | ||
| Operating Junction Temperature | Tj | 150 | C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | C | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 0.89 | C/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 62.5 | C/W | 1 | |||
| Drain-source Breakdown Voltage | BVDSS | 600 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=600V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | μA | VDS=480V, Tc=125C | 2 | ||
| Gate-Body Leakage Current, Forward | IGSSF | 100 | nA | VGS=+30V, VDS=0V | 2 | ||
| Gate-Body Leakage Current, Reverse | IGSSR | -100 | nA | VGS=-30V, VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 4 | V | VDS=VGS, ID=250μA | 2 | |
| Static Drain-Source On-Resistance | RDS(on) | 0.7 | 0.95 | Ω | VGS=10 V, ID=5.0A | 2 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 10 | A | 2 | |||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 40 | A | 2 | |||
| Drain-Source Diode Forward Voltage | VSD | 1.3 | V | VGS=0V, IS=10.0A | 2 |
CAD (KiCad official)
- Symbol:
SMT10N60 - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F-3 (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUAKE datasheet (5 pp, sha256
3c5fd14aaa39e6e2, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).