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SMT10N60

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HUAKE MOSFETs, TO-220F-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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SMT10N60

HUAKE · MOSFETs · TO-220F-3

SMT10N60 from HUAKE, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS=10V for the stated RDS(on), gate-source voltage limited to ±30V.
2 D passive Drain; 600V maximum drain-source voltage, 10.0A continuous drain current at Tc=25C, 40A pulsed.
3 S passive Source; connects to the body diode anode and the return for the 10.0A continuous drain current.

Key specifications

Parameter Value
Manufacturer HUAKE
Package TO-220F-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 600 V 1
Drain Current - Continuous ID 10 A Tc=25C 1
Drain Current - Continuous ID 6 A Tc=100C 1
Drain Current - Pulsed IDM 40 A Note 1 1
Gate-Source Voltage VGSS -30 30 V 1
Single Pulsed Avalanche Energy EAS 713 mJ Note 2: L=14.5mH, IAS=10.0A, VDD=50V, RG=25 Ω, Starting TJ=25C 1
Avalanche Current IAR 10 A Note 1 1
Repetitive Avalanche Energy EAR 17.8 mJ Note 1 1
Peak Diode Recovery dv/dt dv/dt 4.5 V/ns Note 3: ISD≤10.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25C 1
Power Dissipation PD 140 W TC=25C 1
Operating Junction Temperature Tj 150 C 1
Storage Temperature Range Tstg -55 150 C 1
Thermal Resistance, Junction to Case RθJC 0.89 C/W 1
Thermal Resistance, Junction to Ambient RθJA 62.5 C/W 1
Drain-source Breakdown Voltage BVDSS 600 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=600V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 10 μA VDS=480V, Tc=125C 2
Gate-Body Leakage Current, Forward IGSSF 100 nA VGS=+30V, VDS=0V 2
Gate-Body Leakage Current, Reverse IGSSR -100 nA VGS=-30V, VDS=0V 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 0.7 0.95 Ω VGS=10 V, ID=5.0A 2
Maximum Continuous Drain-Source Diode Forward Current IS 10 A 2
Maximum Pulsed Drain-Source Diode Forward Current ISM 40 A 2
Drain-Source Diode Forward Voltage VSD 1.3 V VGS=0V, IS=10.0A 2

CAD (KiCad official)

  • Symbol: SMT10N60
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUAKE datasheet (5 pp, sha256 3c5fd14aaa39e6e2, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF