# SMT10N60

**HUAKE** · MOSFETs · TO-220F-3

SMT10N60 from HUAKE, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS=10V for the stated RDS(on), gate-source voltage limited to ±30V. |
| 2 | D | passive | Drain; 600V maximum drain-source voltage, 10.0A continuous drain current at Tc=25C, 40A pulsed. |
| 3 | S | passive | Source; connects to the body diode anode and the return for the 10.0A continuous drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HUAKE |
| Package | TO-220F-3 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 600 | V |  | 1 |
| Drain Current - Continuous | ID |  |  | 10 | A | Tc=25C | 1 |
| Drain Current - Continuous | ID |  |  | 6 | A | Tc=100C | 1 |
| Drain Current - Pulsed | IDM |  |  | 40 | A | Note 1 | 1 |
| Gate-Source Voltage | VGSS | -30 |  | 30 | V |  | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 713 | mJ | Note 2: L=14.5mH, IAS=10.0A, VDD=50V, RG=25 Ω, Starting TJ=25C | 1 |
| Avalanche Current | IAR |  |  | 10 | A | Note 1 | 1 |
| Repetitive Avalanche Energy | EAR |  |  | 17.8 | mJ | Note 1 | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 4.5 | V/ns | Note 3: ISD≤10.0A, di/dt≤200A/μs, VDD≤BVDSS, Starting TJ=25C | 1 |
| Power Dissipation | PD |  |  | 140 | W | TC=25C | 1 |
| Operating Junction Temperature | Tj |  |  | 150 | C |  | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | C |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 0.89 | C/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 62.5 | C/W |  | 1 |
| Drain-source Breakdown Voltage | BVDSS | 600 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=600V, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | μA | VDS=480V, Tc=125C | 2 |
| Gate-Body Leakage Current, Forward | IGSSF |  |  | 100 | nA | VGS=+30V, VDS=0V | 2 |
| Gate-Body Leakage Current, Reverse | IGSSR |  |  | -100 | nA | VGS=-30V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(on) |  | 0.7 | 0.95 | Ω | VGS=10 V, ID=5.0A | 2 |
| Maximum Continuous Drain-Source Diode Forward Current | IS |  |  | 10 | A |  | 2 |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM |  |  | 40 | A |  | 2 |
| Drain-Source Diode Forward Voltage | VSD |  |  | 1.3 | V | VGS=0V, IS=10.0A | 2 |

## CAD (KiCad official)

- Symbol: `SMT10N60`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F-3 (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HUAKE datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588888949456842752) (5 pp, sha256 `3c5fd14aaa39e6e2`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/smt10n60-datasheet.pdf)