component
NM2302B
Public Made by Adomby adom
Shandong Jingdao Microelectronics MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNM2302B
Shandong Jingdao Microelectronics · MOSFETs · SOT-23
NM2302B from Shandong Jingdao Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±12 V (VGSS). |
| 2 | Drain | passive | Drain terminal of the N-channel MOSFET; rated 20 V drain-source voltage (VDSS) and 3 A continuous drain current (ID). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, the reference for the gate-source rating (±12 V) and the drain-source rating (20 V VDSS). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 1 | |||
| Gate-Source Voltage | VGSS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 3 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | 2.4 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 14 | A | Note 2: repetitive rating, pulse width limited by max junction temperature | 1 | ||
| Power Dissipation | PD | 0.7 | W | 1 | |||
| Operation Junction and Storage Temperature | Tj,Tstg | -55 | 150 | °C | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS=0V,ID=250uA | 2 | ||
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=20V,VGS=0V | 2 | ||
| Gate-Source Leakage Current (Forward) | IGSS | 100 | nA | VGS=12V,VDS=0V | 2 | ||
| Gate-Source Leakage Current (Reverse) | IGSS | -100 | nA | VGS=-12V,VDS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.5 | 0.7 | 1.1 | V | VDS=VGS,ID=250uA | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | 36 | 55 | mΩ | VGS=4.5V,ID=3A | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 47 | 85 | mΩ | VGS=2.5V,ID=2A | 2 | |
| Maximum Body-Diode Continuous Current | IS | 3 | A | 2 | |||
| Maximum Body-Diode Pulsed Current | ISM | 12 | A | 2 |
CAD (KiCad official)
- Symbol:
NM2302B - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nm2302b-etched.step/nm2302b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nm2302b.step/nm2302b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (6 pp, sha256
2a77ce5d1b6f5486, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).