main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers nm2302b: viewers · Ray 16d ago
nm2302b-etched.glb Publish 0.1.0 · Ray 16d ago
nm2302b-etched.step nm2302b: factory component page (tier=lcsc) · Ray 16d ago
nm2302b-hero.glb nm2302b: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
nm2302b-hero.overlay.json Publish 0.1.0 · Ray 16d ago
nm2302b.glb Publish 0.1.0 · Ray 16d ago
nm2302b.kicad_mod Publish 0.1.0 · Ray 16d ago
nm2302b.kicad_sym Publish 0.1.0 · Ray 16d ago
nm2302b.lbr Publish 0.1.0 · Ray 16d ago
nm2302b.step Publish 0.1.0 · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago

NM2302B

Shandong Jingdao Microelectronics · MOSFETs · SOT-23

NM2302B from Shandong Jingdao Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal of the N-channel MOSFET; the gate-source voltage is rated ±12 V (VGSS).
2 Drain passive Drain terminal of the N-channel MOSFET; rated 20 V drain-source voltage (VDSS) and 3 A continuous drain current (ID).
3 Source passive Source terminal of the N-channel MOSFET, the reference for the gate-source rating (±12 V) and the drain-source rating (20 V VDSS).

Key specifications

Parameter Value
Manufacturer Shandong Jingdao Microelectronics
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 1
Gate-Source Voltage VGSS -12 12 V 1
Continuous Drain Current ID 3 A TA=25℃ 1
Continuous Drain Current ID 2.4 A TA=70℃ 1
Pulsed Drain Current IDM 14 A Note 2: repetitive rating, pulse width limited by max junction temperature 1
Power Dissipation PD 0.7 W 1
Operation Junction and Storage Temperature Tj,Tstg -55 150 °C 1
Drain-Source Breakdown Voltage BVDSS 20 V VGS=0V,ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=20V,VGS=0V 2
Gate-Source Leakage Current (Forward) IGSS 100 nA VGS=12V,VDS=0V 2
Gate-Source Leakage Current (Reverse) IGSS -100 nA VGS=-12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.1 V VDS=VGS,ID=250uA 2
Static Drain-Source On-State Resistance RDS(ON) 36 55 mΩ VGS=4.5V,ID=3A 2
Static Drain-Source On-State Resistance RDS(ON) 47 85 mΩ VGS=2.5V,ID=2A 2
Maximum Body-Diode Continuous Current IS 3 A 2
Maximum Body-Diode Pulsed Current ISM 12 A 2

CAD (KiCad official)

  • Symbol: NM2302B
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nm2302b-etched.step / nm2302b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nm2302b.step / nm2302b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shandong Jingdao Microelectronics datasheet (6 pp, sha256 2a77ce5d1b6f5486, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF