component
ZXT10P12DE6TA
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Contents
README
markdownZXT10P12DE6TA
Diodes Incorporated · Bipolar Transistors - BJT · SOT-26
ZXT10P12DE6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector, tied internally with pins 2, 5 and 6; collector-emitter voltage limit is -12V and continuous collector current is -3A. |
| 2 | C | passive | Collector, tied internally with pins 1, 5 and 6; collector-emitter voltage limit is -12V and peak pulse current is -10A. |
| 3 | B | passive | Base of the PNP transistor; base current is limited to -500mA and emitter-base voltage to -7V. |
| 4 | E | passive | Emitter of the PNP transistor; emitter-base breakdown voltage is -7V minimum. |
| 5 | C | passive | Collector, tied internally with pins 1, 2 and 6; collector-base voltage limit is -12V. |
| 6 | C | passive | Collector, tied internally with pins 1, 2 and 5; the collector leads serve as the thermal solder-point with RθJL of 30 °C/W. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -12 | -35 | V | IC = -100µA | 4 | |
| Collector-Emitter Breakdown Voltage | BVCEO | -12 | -25 | V | IC = -10mA | 4 | |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -8.5 | V | IE = -100µA | 4 | |
| Collector-Base Cutoff Current | ICBO | -100 | nA | VCB = -10V | 4 | ||
| Emitter Cutoff Current | IEBO | -100 | nA | VEB = -4V | 4 | ||
| Collector-Emitter Cutoff Current | ICES | -100 | nA | VCES = -10V | 4 | ||
| DC Current Gain | hFE | 300 | 475 | IC = -10mA, VCE = -2V | 4 | ||
| DC Current Gain | hFE | 300 | 450 | IC = -0.1A, VCE = -2V | 4 | ||
| DC Current Gain | hFE | 180 | 275 | IC = -2.5A, VCE = -2V | 4 | ||
| DC Current Gain | hFE | 60 | 100 | IC = -8.0A, VCE = -2V | 4 | ||
| DC Current Gain | hFE | 45 | 70 | IC = -10A, VCE = -2V | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -10 | -17 | mV | IC = -0.1A, IB = -10mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -100 | -140 | mV | IC = -1.0A, IB = -10mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -100 | -150 | mV | IC = -1.5A, IB = -50mA | 4 | |
| Collector-Emitter Saturation Voltage | VCE(sat) | -195 | -300 | mV | IC = -3.0A, IB = -50mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -0.9 | -0.95 | V | IC = -3.0A, IB = -50mA | 4 | |
| Base-Emitter Turn-On Voltage | VBE(on) | -0.85 | -0.9 | V | IC = -3.0A, VCE = -2V | 4 | |
| Current Gain-Bandwidth Product | fT | 80 | 110 | MHz | VCE = -10V, IC = -50mA, f = 100MHz | 4 | |
| Output Capacitance | Cobo | 21 | 30 | pF | VCB = -10V, f = 1MHz | 4 | |
| Turn-On Time | t(on) | 70 | ns | VCC = -6V, IC = -2A | 4 | ||
| Turn-Off Time | t(off) | 130 | ns | IB1 = -IB2 = -50mA | 4 | ||
| Collector-Base Voltage | VCBO | -12 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | -12 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | -7 | V | TA = +25°C | 2 | ||
| Base Current | IB | -500 | mA | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | -3 | A | TA = +25°C | 2 | ||
| Peak Pulse Collector Current | ICM | -10 | A | TA = +25°C | 2 | ||
| Power Dissipation | PD | 1.1 | W | Note 5: 25mm x 25mm 1oz copper, still air, steady-state | 2 | ||
| Power Dissipation | PD | 1.7 | W | Note 6: t ≤ 5 seconds | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 113 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 73 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Leads | RθJL | 30 | °C/W | Note 7 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| ESD Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| ESD Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
ZXT10P12DE6TA - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
zxt10p12de6ta-etched.step/zxt10p12de6ta-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);zxt10p12de6ta.step/zxt10p12de6ta.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
5f4507d0f05c356f, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).