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ZXT10P12DE6TA

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Diodes Incorporated Bipolar Transistors - BJT, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ZXT10P12DE6TA

Diodes Incorporated · Bipolar Transistors - BJT · SOT-26

ZXT10P12DE6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 C passive Collector, tied internally with pins 2, 5 and 6; collector-emitter voltage limit is -12V and continuous collector current is -3A.
2 C passive Collector, tied internally with pins 1, 5 and 6; collector-emitter voltage limit is -12V and peak pulse current is -10A.
3 B passive Base of the PNP transistor; base current is limited to -500mA and emitter-base voltage to -7V.
4 E passive Emitter of the PNP transistor; emitter-base breakdown voltage is -7V minimum.
5 C passive Collector, tied internally with pins 1, 2 and 6; collector-base voltage limit is -12V.
6 C passive Collector, tied internally with pins 1, 2 and 5; the collector leads serve as the thermal solder-point with RθJL of 30 °C/W.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Breakdown Voltage BVCBO -12 -35 V IC = -100µA 4
Collector-Emitter Breakdown Voltage BVCEO -12 -25 V IC = -10mA 4
Emitter-Base Breakdown Voltage BVEBO -7 -8.5 V IE = -100µA 4
Collector-Base Cutoff Current ICBO -100 nA VCB = -10V 4
Emitter Cutoff Current IEBO -100 nA VEB = -4V 4
Collector-Emitter Cutoff Current ICES -100 nA VCES = -10V 4
DC Current Gain hFE 300 475 IC = -10mA, VCE = -2V 4
DC Current Gain hFE 300 450 IC = -0.1A, VCE = -2V 4
DC Current Gain hFE 180 275 IC = -2.5A, VCE = -2V 4
DC Current Gain hFE 60 100 IC = -8.0A, VCE = -2V 4
DC Current Gain hFE 45 70 IC = -10A, VCE = -2V 4
Collector-Emitter Saturation Voltage VCE(sat) -10 -17 mV IC = -0.1A, IB = -10mA 4
Collector-Emitter Saturation Voltage VCE(sat) -100 -140 mV IC = -1.0A, IB = -10mA 4
Collector-Emitter Saturation Voltage VCE(sat) -100 -150 mV IC = -1.5A, IB = -50mA 4
Collector-Emitter Saturation Voltage VCE(sat) -195 -300 mV IC = -3.0A, IB = -50mA 4
Base-Emitter Saturation Voltage VBE(sat) -0.9 -0.95 V IC = -3.0A, IB = -50mA 4
Base-Emitter Turn-On Voltage VBE(on) -0.85 -0.9 V IC = -3.0A, VCE = -2V 4
Current Gain-Bandwidth Product fT 80 110 MHz VCE = -10V, IC = -50mA, f = 100MHz 4
Output Capacitance Cobo 21 30 pF VCB = -10V, f = 1MHz 4
Turn-On Time t(on) 70 ns VCC = -6V, IC = -2A 4
Turn-Off Time t(off) 130 ns IB1 = -IB2 = -50mA 4
Collector-Base Voltage VCBO -12 V TA = +25°C 2
Collector-Emitter Voltage VCEO -12 V TA = +25°C 2
Emitter-Base Voltage VEBO -7 V TA = +25°C 2
Base Current IB -500 mA TA = +25°C 2
Continuous Collector Current IC -3 A TA = +25°C 2
Peak Pulse Collector Current ICM -10 A TA = +25°C 2
Power Dissipation PD 1.1 W Note 5: 25mm x 25mm 1oz copper, still air, steady-state 2
Power Dissipation PD 1.7 W Note 6: t ≤ 5 seconds 2
Thermal Resistance, Junction to Ambient RθJA 113 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RθJA 73 °C/W Note 6 2
Thermal Resistance, Junction to Leads RθJL 30 °C/W Note 7 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
ESD Human Body Model ESD HBM 4000 V JEDEC Class 3A 2
ESD Machine Model ESD MM 400 V JEDEC Class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: ZXT10P12DE6TA
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: zxt10p12de6ta-etched.step / zxt10p12de6ta-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); zxt10p12de6ta.step / zxt10p12de6ta.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 5f4507d0f05c356f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF