# ZXT10P12DE6TA

**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-26

ZXT10P12DE6TA from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | C | passive | Collector, tied internally with pins 2, 5 and 6; collector-emitter voltage limit is -12V and continuous collector current is -3A. |
| 2 | C | passive | Collector, tied internally with pins 1, 5 and 6; collector-emitter voltage limit is -12V and peak pulse current is -10A. |
| 3 | B | passive | Base of the PNP transistor; base current is limited to -500mA and emitter-base voltage to -7V. |
| 4 | E | passive | Emitter of the PNP transistor; emitter-base breakdown voltage is -7V minimum. |
| 5 | C | passive | Collector, tied internally with pins 1, 2 and 6; collector-base voltage limit is -12V. |
| 6 | C | passive | Collector, tied internally with pins 1, 2 and 5; the collector leads serve as the thermal solder-point with RθJL of 30 °C/W. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -12 | -35 |  | V | IC = -100µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -12 | -25 |  | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -7 | -8.5 |  | V | IE = -100µA | 4 |
| Collector-Base Cutoff Current | ICBO |  |  | -100 | nA | VCB = -10V | 4 |
| Emitter Cutoff Current | IEBO |  |  | -100 | nA | VEB = -4V | 4 |
| Collector-Emitter Cutoff Current | ICES |  |  | -100 | nA | VCES = -10V | 4 |
| DC Current Gain | hFE | 300 | 475 |  |  | IC = -10mA, VCE = -2V | 4 |
| DC Current Gain | hFE | 300 | 450 |  |  | IC = -0.1A, VCE = -2V | 4 |
| DC Current Gain | hFE | 180 | 275 |  |  | IC = -2.5A, VCE = -2V | 4 |
| DC Current Gain | hFE | 60 | 100 |  |  | IC = -8.0A, VCE = -2V | 4 |
| DC Current Gain | hFE | 45 | 70 |  |  | IC = -10A, VCE = -2V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -10 | -17 | mV | IC = -0.1A, IB = -10mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -100 | -140 | mV | IC = -1.0A, IB = -10mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -100 | -150 | mV | IC = -1.5A, IB = -50mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) |  | -195 | -300 | mV | IC = -3.0A, IB = -50mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) |  | -0.9 | -0.95 | V | IC = -3.0A, IB = -50mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(on) |  | -0.85 | -0.9 | V | IC = -3.0A, VCE = -2V | 4 |
| Current Gain-Bandwidth Product | fT | 80 | 110 |  | MHz | VCE = -10V, IC = -50mA, f = 100MHz | 4 |
| Output Capacitance | Cobo |  | 21 | 30 | pF | VCB = -10V, f = 1MHz | 4 |
| Turn-On Time | t(on) |  | 70 |  | ns | VCC = -6V, IC = -2A | 4 |
| Turn-Off Time | t(off) |  | 130 |  | ns | IB1 = -IB2 = -50mA | 4 |
| Collector-Base Voltage | VCBO |  |  | -12 | V | TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO |  |  | -12 | V | TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO |  |  | -7 | V | TA = +25°C | 2 |
| Base Current | IB |  |  | -500 | mA | TA = +25°C | 2 |
| Continuous Collector Current | IC |  |  | -3 | A | TA = +25°C | 2 |
| Peak Pulse Collector Current | ICM |  |  | -10 | A | TA = +25°C | 2 |
| Power Dissipation | PD |  |  | 1.1 | W | Note 5: 25mm x 25mm 1oz copper, still air, steady-state | 2 |
| Power Dissipation | PD |  |  | 1.7 | W | Note 6: t ≤ 5 seconds | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 113 | °C/W | Note 5 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  |  | 73 | °C/W | Note 6 | 2 |
| Thermal Resistance, Junction to Leads | RθJL |  |  | 30 | °C/W | Note 7 | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| ESD Human Body Model | ESD HBM |  |  | 4000 | V | JEDEC Class 3A | 2 |
| ESD Machine Model | ESD MM |  |  | 400 | V | JEDEC Class C | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts |  | tin |  Terminals: Finish, Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |

## CAD (KiCad official)

- Symbol: `ZXT10P12DE6TA`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files: `zxt10p12de6ta-etched.step` / `zxt10p12de6ta-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `zxt10p12de6ta.step` / `zxt10p12de6ta.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/ZXT10P12DE6TA.pdf) (7 pp, sha256 `5f4507d0f05c356f`, retrieved 2026-10-27, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/zxt10p12de6ta-datasheet.pdf)