component
IRF7341TR
Public Made by Adomby adom
UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownIRF7341TR
UMW · MOSFETs · SOP-8
IRF7341TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | SOURCE terminal of one N-channel MOSFET in the dual device; the datasheet gives VDS 55 V and continuous ID 4.7 A (VGS=10 V) for the device. |
| 2 | G1 | input | GATE terminal of one N-channel MOSFET in the dual device; gate-to-source voltage is rated ±20 V. |
| 3 | S2 | passive | SOURCE terminal of the second N-channel MOSFET in the dual device; the datasheet gives VDS 55 V and continuous ID 4.7 A (VGS=10 V) for the device. |
| 4 | G2 | input | GATE terminal of the second N-channel MOSFET in the dual device; gate-to-source voltage is rated ±20 V. |
| 5 | D1 | passive | DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum. |
| 6 | D1 | passive | DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum. |
| 7 | D2 | passive | DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum. |
| 8 | D2 | passive | DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 55 | V | ID=250µA, VGS=0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | V | VDS=VGS, ID=250μA | 3 | |
| Forward Transconductance | gFS | 7.9 | S | VDS=10V, ID=4.5A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.04 | Ω | VGS=10V, ID=4.7A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.055 | Ω | VGS=4.5V, ID=3.8A | 3 | ||
| Gate-to-Source Forward Leakage | IGSS | 100 | nA | VGS=20V | 3 | ||
| Gate-to-Source Reverse Leakage | IGSS | -100 | nA | VGS=-20V | 3 | ||
| Drain-to-Source Leakage Current | IDSS | 25 | µA | VDS=55V, VGS=0V | 3 | ||
| Total Gate Charge | Qg | 36 | nC | ID=4.5A, VDS=44V, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 3.4 | nC | ID=4.5A, VDS=44V, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 10 | nC | ID=4.5A, VDS=44V, VGS=10V | 3 | ||
| Turn-On Delay Time | tD(on) | 12 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Rise Time | tr | 4.8 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 48 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Fall Time | tf | 20 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Breakdown Voltage Temperature Coefficient | ΔV(BR)DSS/TJ | 0.059 | V/°C | ID=1mA, Reference to 25°C | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.028 | Ω | VGS=10V, ID=4.7A | 3 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 0.03 | Ω | VGS=4.5V, ID=3.8A | 3 | ||
| Total Gate Charge | Qg | 24 | nC | ID=4.5A, VDS=44V, VGS=10V | 3 | ||
| Gate-to-Source Charge | Qgs | 2.3 | nC | ID=4.5A, VDS=44V, VGS=10V | 3 | ||
| Gate-to-Drain (Miller) Charge | Qgd | 7 | nC | ID=4.5A, VDS=44V, VGS=10V | 3 | ||
| Turn-On Delay Time | tD(on) | 8.3 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Rise Time | tr | 3.2 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Turn-Off Delay Time | tD(off) | 32 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Fall Time | tf | 13 | ns | VDD=28V, ID=1A, RG=6Ω, RD=16Ω | 3 | ||
| Input Capacitance | Ciss | 740 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 | ||
| Output Capacitance | Coss | 190 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 71 | pF | VGS=0V, VDS=-25V, f=1.0MHz | 3 | ||
| Continuous Source Current (Body Diode) | IS | -2 | A | 4 | |||
| Pulsed Source Current (Body Diode) | ISM | 38 | A | Repetitive rating; pulse width limited by max. junction temperature | 4 | ||
| Diode Forward Voltage | VSD | 1.2 | V | TJ=25°C, IS=1.7A, VGS=0V | 4 | ||
| Reverse Recovery Time | trr | 60 | 90 | ns | TJ=25°C, IF=1.7A, dI/dt=100A/μs | 4 | |
| Reverse Recovery Charge | Qrr | 120 | 170 | nC | TJ=25°C, IF=1.7A, dI/dt=100A/μs | 4 | |
| Drain-Source Voltage | VDS | 55 | V | TA=25°C unless otherwise noted | 1 | ||
| Continuous Drain Current | ID | 4.7 | A | VGS=10V, TA=25°C unless otherwise noted | 1 | ||
| Continuous Drain Current | ID | 3.8 | A | VGS=10V, TA=25°C unless otherwise noted | 1 | ||
| Pulsed Drain Current | IDM | 38 | A | Pulse rating ①, TA=25°C unless otherwise noted | 1 | ||
| Power Dissipation | PD | 2 | W | TA=25°C unless otherwise noted | 1 | ||
| Power Dissipation | PD | 1.3 | W | TA=25°C unless otherwise noted | 1 | ||
| Linear Derating Factor | 0.016 | W/°C | TA=25°C unless otherwise noted | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | TA=25°C unless otherwise noted | 1 | |
| Gate-to-Source Voltage Single Pulse | VGSM | 30 | V | Single Pulse tp<10µs | 1 | ||
| Maximum Junction-to-Ambient | RθJA | 62.5 | °C/W | When mounted on 1 inch square copper board, t<10 sec | 2 | ||
| Single Pulse Avalanche Energy | EAS | 72 | mJ | Starting TJ=25°C, L=6.5mH, RG=25Ω, IAS=4.7A | 2 | ||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | ISD≤4.7A, di/dt≤220A/µs, VDD≤V(BR)DSS, TJ≤150°C | 2 | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
IRF7341TR - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
irf7341tr-etched.step/irf7341tr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);irf7341tr.step/irf7341tr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
db36a90a2d966973, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).