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IRF7341TR

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UMW MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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IRF7341TR

UMW · MOSFETs · SOP-8

IRF7341TR from UMW, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive SOURCE terminal of one N-channel MOSFET in the dual device; the datasheet gives VDS 55 V and continuous ID 4.7 A (VGS=10 V) for the device.
2 G1 input GATE terminal of one N-channel MOSFET in the dual device; gate-to-source voltage is rated ±20 V.
3 S2 passive SOURCE terminal of the second N-channel MOSFET in the dual device; the datasheet gives VDS 55 V and continuous ID 4.7 A (VGS=10 V) for the device.
4 G2 input GATE terminal of the second N-channel MOSFET in the dual device; gate-to-source voltage is rated ±20 V.
5 D1 passive DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum.
6 D1 passive DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum.
7 D2 passive DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum.
8 D2 passive DRAIN terminal of the N-channel MOSFETs; drain-source voltage is rated 55 V maximum.

Key specifications

Parameter Value
Manufacturer UMW
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 55 V ID=250µA, VGS=0V 3
Gate Threshold Voltage VGS(th) 1 2 V VDS=VGS, ID=250μA 3
Forward Transconductance gFS 7.9 S VDS=10V, ID=4.5A 3
Static Drain-to-Source On-Resistance RDS(ON) 0.04 Ω VGS=10V, ID=4.7A 3
Static Drain-to-Source On-Resistance RDS(ON) 0.055 Ω VGS=4.5V, ID=3.8A 3
Gate-to-Source Forward Leakage IGSS 100 nA VGS=20V 3
Gate-to-Source Reverse Leakage IGSS -100 nA VGS=-20V 3
Drain-to-Source Leakage Current IDSS 25 µA VDS=55V, VGS=0V 3
Total Gate Charge Qg 36 nC ID=4.5A, VDS=44V, VGS=10V 3
Gate-to-Source Charge Qgs 3.4 nC ID=4.5A, VDS=44V, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 10 nC ID=4.5A, VDS=44V, VGS=10V 3
Turn-On Delay Time tD(on) 12 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Rise Time tr 4.8 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Turn-Off Delay Time tD(off) 48 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Fall Time tf 20 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Breakdown Voltage Temperature Coefficient ΔV(BR)DSS/TJ 0.059 V/°C ID=1mA, Reference to 25°C 3
Static Drain-to-Source On-Resistance RDS(ON) 0.028 Ω VGS=10V, ID=4.7A 3
Static Drain-to-Source On-Resistance RDS(ON) 0.03 Ω VGS=4.5V, ID=3.8A 3
Total Gate Charge Qg 24 nC ID=4.5A, VDS=44V, VGS=10V 3
Gate-to-Source Charge Qgs 2.3 nC ID=4.5A, VDS=44V, VGS=10V 3
Gate-to-Drain (Miller) Charge Qgd 7 nC ID=4.5A, VDS=44V, VGS=10V 3
Turn-On Delay Time tD(on) 8.3 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Rise Time tr 3.2 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Turn-Off Delay Time tD(off) 32 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Fall Time tf 13 ns VDD=28V, ID=1A, RG=6Ω, RD=16Ω 3
Input Capacitance Ciss 740 pF VGS=0V, VDS=-25V, f=1.0MHz 3
Output Capacitance Coss 190 pF VGS=0V, VDS=-25V, f=1.0MHz 3
Reverse Transfer Capacitance Crss 71 pF VGS=0V, VDS=-25V, f=1.0MHz 3
Continuous Source Current (Body Diode) IS -2 A 4
Pulsed Source Current (Body Diode) ISM 38 A Repetitive rating; pulse width limited by max. junction temperature 4
Diode Forward Voltage VSD 1.2 V TJ=25°C, IS=1.7A, VGS=0V 4
Reverse Recovery Time trr 60 90 ns TJ=25°C, IF=1.7A, dI/dt=100A/μs 4
Reverse Recovery Charge Qrr 120 170 nC TJ=25°C, IF=1.7A, dI/dt=100A/μs 4
Drain-Source Voltage VDS 55 V TA=25°C unless otherwise noted 1
Continuous Drain Current ID 4.7 A VGS=10V, TA=25°C unless otherwise noted 1
Continuous Drain Current ID 3.8 A VGS=10V, TA=25°C unless otherwise noted 1
Pulsed Drain Current IDM 38 A Pulse rating ①, TA=25°C unless otherwise noted 1
Power Dissipation PD 2 W TA=25°C unless otherwise noted 1
Power Dissipation PD 1.3 W TA=25°C unless otherwise noted 1
Linear Derating Factor 0.016 W/°C TA=25°C unless otherwise noted 1
Gate-to-Source Voltage VGS -20 20 V TA=25°C unless otherwise noted 1
Gate-to-Source Voltage Single Pulse VGSM 30 V Single Pulse tp<10µs 1
Maximum Junction-to-Ambient RθJA 62.5 °C/W When mounted on 1 inch square copper board, t<10 sec 2
Single Pulse Avalanche Energy EAS 72 mJ Starting TJ=25°C, L=6.5mH, RG=25Ω, IAS=4.7A 2
Peak Diode Recovery dv/dt dv/dt 5 V/ns ISD≤4.7A, di/dt≤220A/µs, VDD≤V(BR)DSS, TJ≤150°C 2
Junction and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: IRF7341TR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: irf7341tr-etched.step / irf7341tr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irf7341tr.step / irf7341tr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (10 pp, sha256 db36a90a2d966973, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF