component
HUMZ1NTR
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHUMZ1NTR
HXY MOSFET · Bipolar (BJT) · SOT-363
HUMZ1NTR from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (pin 1 corner, bottom-left of the package drawing). |
| 2 | B1 | passive | Base of transistor 1. |
| 3 | C2 | passive | Collector of transistor 2 (bottom-right of the package drawing). |
| 4 | E2 | passive | Emitter of transistor 2 (top-right of the package drawing). |
| 5 | B2 | passive | Base of transistor 2. |
| 6 | C1 | passive | Collector of transistor 1 (top-left of the package drawing). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage (NPN) | V(BR)CBO | 60 | V | IC=50μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage (NPN) | V(BR)CEO | 50 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage (NPN) | V(BR)EBO | 7 | V | IE=50μA,IC=0 | 1 | ||
| Collector cut-off current (NPN) | ICBO | 0.1 | μA | VCB=60V,IE=0 | 1 | ||
| Emitter cut-off current (NPN) | IEBO | 0.1 | μA | VEB=7V,IC=0 | 1 | ||
| DC current gain (NPN) | hFE | 120 | 560 | VCE=6V,IC=1mA | 1 | ||
| Collector-emitter saturation voltage (NPN) | VCE(sat) | 0.4 | V | IC=50mA,IB=5mA | 1 | ||
| Transition frequency (NPN) | fT | 180 | MHz | VCE=12V,IC=2mA,f=100MHz | 1 | ||
| Collector output capacitance (NPN) | Cob | 2 | 3.5 | pF | VCB=12V,IE=0,f=1MHz | 1 | |
| Collector-base breakdown voltage (PNP) | V(BR)CBO | -60 | V | IC=-50μA,IE=0 | 2 | ||
| Collector-emitter breakdown voltage (PNP) | V(BR)CEO | -50 | V | IC=-1mA,IB=0 | 2 | ||
| Emitter-base breakdown voltage (PNP) | V(BR)EBO | -6 | V | IE=-50μA,IC=0 | 2 | ||
| Collector cut-off current (PNP) | ICBO | -0.1 | μA | VCB=-60V,IE=0 | 2 | ||
| Emitter cut-off current (PNP) | IEBO | -0.1 | μA | VEB=-6V,IC=0 | 2 | ||
| DC current gain (PNP) | hFE | 120 | 560 | VCE=-6V,IC=-1mA | 2 | ||
| Collector-emitter saturation voltage (PNP) | VCE(sat) | -0.5 | V | IC=-50mA,IB=-5mA | 2 | ||
| Transition frequency (PNP) | fT | 140 | MHz | VCE=-12V,IC=-2mA,f=100MHz | 2 | ||
| Collector output capacitance (PNP) | Cob | 5 | pF | VCB=-12V,IE=0,f=1MHz | 2 | ||
| Collector-base voltage (NPN) | VCBO | 60 | V | 1 | |||
| Collector-emitter voltage (NPN) | VCEO | 50 | V | 1 | |||
| Emitter-base voltage (NPN) | VEBO | 7 | V | 1 | |||
| Collector current (NPN) | IC | 150 | mA | 1 | |||
| Collector power dissipation (NPN) | PC | 150 | mW | 1 | |||
| Thermal resistance, junction to ambient (NPN) | RΘJA | 625 | ℃/W | 1 | |||
| Operating junction and storage temperature range (NPN) | TJ ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base voltage (PNP) | VCBO | -60 | V | 2 | |||
| Collector-emitter voltage (PNP) | VCEO | -60 | V | 2 | |||
| Emitter-base voltage (PNP) | VEBO | -7 | V | 2 | |||
| Collector current (PNP) | IC | -150 | mA | 2 | |||
| Collector power dissipation (PNP) | PC | 150 | mW | 2 | |||
| Thermal resistance, junction to ambient (PNP) | RΘJA | 625 | ℃/W | 2 | |||
| Operating junction and storage temperature range (PNP) | TJ ,Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
HUMZ1NTR - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
humz1ntr-etched.step/humz1ntr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);humz1ntr.step/humz1ntr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
664722623e7c7dde, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).