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HUMZ1NTR

Public Made by Adom

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HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HUMZ1NTR

HXY MOSFET · Bipolar (BJT) · SOT-363

HUMZ1NTR from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 E1 passive Emitter of transistor 1 (pin 1 corner, bottom-left of the package drawing).
2 B1 passive Base of transistor 1.
3 C2 passive Collector of transistor 2 (bottom-right of the package drawing).
4 E2 passive Emitter of transistor 2 (top-right of the package drawing).
5 B2 passive Base of transistor 2.
6 C1 passive Collector of transistor 1 (top-left of the package drawing).

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage (NPN) V(BR)CBO 60 V IC=50μA,IE=0 1
Collector-emitter breakdown voltage (NPN) V(BR)CEO 50 V IC=1mA,IB=0 1
Emitter-base breakdown voltage (NPN) V(BR)EBO 7 V IE=50μA,IC=0 1
Collector cut-off current (NPN) ICBO 0.1 μA VCB=60V,IE=0 1
Emitter cut-off current (NPN) IEBO 0.1 μA VEB=7V,IC=0 1
DC current gain (NPN) hFE 120 560 VCE=6V,IC=1mA 1
Collector-emitter saturation voltage (NPN) VCE(sat) 0.4 V IC=50mA,IB=5mA 1
Transition frequency (NPN) fT 180 MHz VCE=12V,IC=2mA,f=100MHz 1
Collector output capacitance (NPN) Cob 2 3.5 pF VCB=12V,IE=0,f=1MHz 1
Collector-base breakdown voltage (PNP) V(BR)CBO -60 V IC=-50μA,IE=0 2
Collector-emitter breakdown voltage (PNP) V(BR)CEO -50 V IC=-1mA,IB=0 2
Emitter-base breakdown voltage (PNP) V(BR)EBO -6 V IE=-50μA,IC=0 2
Collector cut-off current (PNP) ICBO -0.1 μA VCB=-60V,IE=0 2
Emitter cut-off current (PNP) IEBO -0.1 μA VEB=-6V,IC=0 2
DC current gain (PNP) hFE 120 560 VCE=-6V,IC=-1mA 2
Collector-emitter saturation voltage (PNP) VCE(sat) -0.5 V IC=-50mA,IB=-5mA 2
Transition frequency (PNP) fT 140 MHz VCE=-12V,IC=-2mA,f=100MHz 2
Collector output capacitance (PNP) Cob 5 pF VCB=-12V,IE=0,f=1MHz 2
Collector-base voltage (NPN) VCBO 60 V 1
Collector-emitter voltage (NPN) VCEO 50 V 1
Emitter-base voltage (NPN) VEBO 7 V 1
Collector current (NPN) IC 150 mA 1
Collector power dissipation (NPN) PC 150 mW 1
Thermal resistance, junction to ambient (NPN) RΘJA 625 ℃/W 1
Operating junction and storage temperature range (NPN) TJ ,Tstg -55 150 ℃ 1
Collector-base voltage (PNP) VCBO -60 V 2
Collector-emitter voltage (PNP) VCEO -60 V 2
Emitter-base voltage (PNP) VEBO -7 V 2
Collector current (PNP) IC -150 mA 2
Collector power dissipation (PNP) PC 150 mW 2
Thermal resistance, junction to ambient (PNP) RΘJA 625 ℃/W 2
Operating junction and storage temperature range (PNP) TJ ,Tstg -55 150 ℃ 2

CAD (KiCad official)

  • Symbol: HUMZ1NTR
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: humz1ntr-etched.step / humz1ntr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); humz1ntr.step / humz1ntr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (4 pp, sha256 664722623e7c7dde, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF