component
SK120N03B
Public Made by Adomby adom
Shikues MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSK120N03B
Shikues · MOSFETs · TO-252
SK120N03B from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET with a Gate-to-Source voltage rating of ±20 V (RDS(ON) specified at VGS=10 V and 4.5 V). |
| 2 | D | passive | Drain (centre lead, also connected to the mounting tab); Drain-to-Source voltage 30 V, continuous drain current 120 A at TC=25℃. |
| 3 | S | passive | Source; body diode continuous source current up to 120 A, pulsed 480 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shikues |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 30 | V | 1 | |||
| Gate-to-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 120 | A | TC=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 480 | A | at VGS=10V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | 1 | |||
| Power Dissipation | PD | 120 | W | TC=25℃ | 1 | ||
| Power Dissipation | PD | 0.8 | W | TA=25℃ | 1 | ||
| Maximum Temperature for Soldering, leads at 1.6mm from case for 10 s | TL | 300 | ℃ | Leads at 0.063in (1.6mm) from case for 10 seconds | 1 | ||
| Maximum Temperature for Soldering, package body for 10 s | TPAK | 260 | ℃ | Package body for 10 seconds | 1 | ||
| Operating and Storage Temperature Range | TJ& TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 1.25 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 75 | ℃/W | 1 | |||
| Drain-to-Source Breakdown Voltage | BVDSS | 30 | V | VGS=0V, ID=250uA | 2 | ||
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=30V, VGS=0V | 2 | ||
| Gate-to-Source Leakage Current (positive polarity) | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Gate-to-Source Leakage Current (negative polarity) | IGSS | -100 | nA | VGS=-20V, VDS=0V | 2 | ||
| Static Drain-to-Source On-Resistance | RDS(ON) | 3.7 | 4 | mΩ | VGS=10V, ID=20A | 2 | |
| Static Drain-to-Source On-Resistance | RDS(ON) | 3.9 | 6 | mΩ | VGS=4.5V, ID=20A | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.7 | 3 | V | VDS=VGS, ID=250uA | 2 |
| Continuous Source Current | ISD | 120 | A | 3 | |||
| Pulsed Source Current | ISM | 480 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.2 | V | IS=30A, VGS=0V | 3 |
CAD (KiCad official)
- Symbol:
SK120N03B - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
sk120n03b-etched.step/sk120n03b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sk120n03b.step/sk120n03b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shikues datasheet (8 pp, sha256
9790a8c67880a399, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).