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SK120N03B

Shikues · MOSFETs · TO-252

SK120N03B from Shikues, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the MOSFET with a Gate-to-Source voltage rating of ±20 V (RDS(ON) specified at VGS=10 V and 4.5 V).
2 D passive Drain (centre lead, also connected to the mounting tab); Drain-to-Source voltage 30 V, continuous drain current 120 A at TC=25℃.
3 S passive Source; body diode continuous source current up to 120 A, pulsed 480 A.

Key specifications

Parameter Value
Manufacturer Shikues
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 30 V 1
Gate-to-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID 120 A TC=25℃ 1
Pulsed Drain Current IDM 480 A at VGS=10V 1
Single Pulse Avalanche Energy EAS 200 mJ 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns 1
Power Dissipation PD 120 W TC=25℃ 1
Power Dissipation PD 0.8 W TA=25℃ 1
Maximum Temperature for Soldering, leads at 1.6mm from case for 10 s TL 300 ℃ Leads at 0.063in (1.6mm) from case for 10 seconds 1
Maximum Temperature for Soldering, package body for 10 s TPAK 260 ℃ Package body for 10 seconds 1
Operating and Storage Temperature Range TJ& TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.25 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 75 ℃/W 1
Drain-to-Source Breakdown Voltage BVDSS 30 V VGS=0V, ID=250uA 2
Drain-to-Source Leakage Current IDSS 1 uA VDS=30V, VGS=0V 2
Gate-to-Source Leakage Current (positive polarity) IGSS 100 nA VGS=+20V, VDS=0V 2
Gate-to-Source Leakage Current (negative polarity) IGSS -100 nA VGS=-20V, VDS=0V 2
Static Drain-to-Source On-Resistance RDS(ON) 3.7 4 mΩ VGS=10V, ID=20A 2
Static Drain-to-Source On-Resistance RDS(ON) 3.9 6 mΩ VGS=4.5V, ID=20A 2
Gate Threshold Voltage VGS(TH) 1 1.7 3 V VDS=VGS, ID=250uA 2
Continuous Source Current ISD 120 A 3
Pulsed Source Current ISM 480 A 3
Diode Forward Voltage VSD 1.2 V IS=30A, VGS=0V 3

CAD (KiCad official)

  • Symbol: SK120N03B
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: sk120n03b-etched.step / sk120n03b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); sk120n03b.step / sk120n03b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shikues datasheet (8 pp, sha256 9790a8c67880a399, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF