component
HSSK2N7002
Public Made by Adomby adom
HUASHUO MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHSSK2N7002
HUASHUO · MOSFETs · SOT-363
HSSK2N7002 from HUASHUO, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2, marked by the pin-1 dot on the SOT-363 pin configuration drawing. |
| 2 | G2 | input | Gate of MOSFET 2, rated for VGS of ±20 V with ESD protection. |
| 3 | D1 | passive | Drain of MOSFET 1, rated for VDS of 60 V and continuous drain current of 300 mA at TA=25℃. |
| 4 | S1 | passive | Source of MOSFET 1. |
| 5 | G1 | input | Gate of MOSFET 1, rated for VGS of ±20 V with ESD protection. |
| 6 | D2 | passive | Drain of MOSFET 2, rated for VDS of 60 V and continuous drain current of 300 mA at TA=25℃. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HUASHUO |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 300 | mA | TA=25℃, VGS @ 10V | 1 | ||
| Continuous Drain Current | ID | 190 | mA | TA=70℃, VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 0.65 | A | 1 | |||
| Total Power Dissipation | PD | 0.35 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 300 | ℃/W | Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 1.8 | 2.3 | Ω | VGS=10V, ID=200mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 2.3 | 3 | Ω | VGS=4.5V, ID=100mA | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.4 | 2.5 | V | VGS=VDS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| Drain-Source Leakage Current | IDSS | 5 | uA | VDS=48V, VGS=0V, TJ=55℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -10 | 10 | uA | VGS=±20V, VDS=0V | 2 | |
| Continuous Source Current | IS | 300 | mA | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 0.65 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=0.5A, TJ=25℃ | 2 |
CAD (KiCad official)
- Symbol:
HSSK2N7002 - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
hssk2n7002-etched.step/hssk2n7002-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hssk2n7002.step/hssk2n7002.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HUASHUO datasheet (6 pp, sha256
d332acda5e585340, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).