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HSSK2N7002

Public Made by Adom

by adom

HUASHUO MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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HSSK2N7002

HUASHUO · MOSFETs · SOT-363

HSSK2N7002 from HUASHUO, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2, marked by the pin-1 dot on the SOT-363 pin configuration drawing.
2 G2 input Gate of MOSFET 2, rated for VGS of ±20 V with ESD protection.
3 D1 passive Drain of MOSFET 1, rated for VDS of 60 V and continuous drain current of 300 mA at TA=25℃.
4 S1 passive Source of MOSFET 1.
5 G1 input Gate of MOSFET 1, rated for VGS of ±20 V with ESD protection.
6 D2 passive Drain of MOSFET 2, rated for VDS of 60 V and continuous drain current of 300 mA at TA=25℃.

Key specifications

Parameter Value
Manufacturer HUASHUO
Package SOT-363
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 300 mA TA=25℃, VGS @ 10V 1
Continuous Drain Current ID 190 mA TA=70℃, VGS @ 10V 1
Pulsed Drain Current IDM 0.65 A 1
Total Power Dissipation PD 0.35 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-Ambient RθJA 300 ℃/W Note 1: surface mounted on 1 inch FR-4 board with 2OZ copper 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 1.8 2.3 Ω VGS=10V, ID=200mA 2
Static Drain-Source On-Resistance RDS(ON) 2.3 3 Ω VGS=4.5V, ID=100mA 2
Gate Threshold Voltage VGS(th) 1 1.4 2.5 V VGS=VDS, ID=250uA 2
Drain-Source Leakage Current IDSS 1 uA VDS=48V, VGS=0V, TJ=25℃ 2
Drain-Source Leakage Current IDSS 5 uA VDS=48V, VGS=0V, TJ=55℃ 2
Gate-Source Leakage Current IGSS -10 10 uA VGS=±20V, VDS=0V 2
Continuous Source Current IS 300 mA VG=VD=0V, Force Current 2
Pulsed Source Current ISM 0.65 A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=0.5A, TJ=25℃ 2

CAD (KiCad official)

  • Symbol: HSSK2N7002
  • Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
  • 3D model: SOT-363 (KiCad packages3D, STEP)
  • 3D model files: hssk2n7002-etched.step / hssk2n7002-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hssk2n7002.step / hssk2n7002.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HUASHUO datasheet (6 pp, sha256 d332acda5e585340, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF