component
TK65E10N1
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTK65E10N1
TOSHIBA · MOSFETs · TO-220
TK65E10N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limit is ±20 V (VGSS) with threshold Vth of 2.0 to 4.0 V at VDS = 10 V, ID = 1.0 mA. |
| 2 | Drain | passive | Drain terminal, connected to the heatsink tab; drain-source voltage rating is 100 V (VDSS) and DC drain current is 65 A (package limit 100 A). |
| 3 | Source | passive | Source terminal; reverse drain (body diode) current is 65 A DC and 296 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 100 | V | 1 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain current (DC) silicon limit | ID | 148 | A | Silicon limit, Tc = 25 | 1 | ||
| Drain current (DC) | ID | 65 | A | Note 1,3 | 1 | ||
| Drain current (pulsed) | IDP | 296 | A | t = 1 ms | 1 | ||
| Power dissipation | PD | 192 | W | Tc = 25 | 1 | ||
| Single-pulse avalanche energy | EAS | 143 | mJ | VDD = 80 V, Tch = 25 (initial), L = 26.1 µH, IAR = 65 A | 1 | ||
| Avalanche current | IAR | 65 | A | 1 | |||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 0.65 | °C/W | 2 | |||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 83.3 | °C/W | 2 | |||
| Gate leakage current | IGSS | -0.1 | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | 65 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 2 | 4 | V | VDS = 10 V, ID = 1.0 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 4 | 4.8 | mΩ | VGS = 10 V, ID = 32.5 A | 3 | |
| Reverse drain current (DC) | IDR | 65 | A | 4 | |||
| Reverse drain current (pulsed) | IDRP | 296 | A | 4 | |||
| Diode forward voltage | VDSF | -1.2 | V | IDR = 65 A, VGS = 0 V | 4 | ||
| Input capacitance | Ciss | 5400 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 42 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Output capacitance | Coss | 950 | pF | VDS = 50 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Gate resistance | rg | 2.4 | Ω | 3 | |||
| Rise time | tr | 19 | ns | See Figure 6.2.1 | 3 | ||
| Turn-on time | ton | 44 | ns | See Figure 6.2.1 | 3 | ||
| Fall time | tf | 26 | ns | See Figure 6.2.1 | 3 | ||
| Turn-off time | toff | 85 | ns | See Figure 6.2.1 | 3 | ||
| Total gate charge | Qg | 81 | nC | VDD ≈ 80 V, VGS = 10 V, ID = 65 A | 3 | ||
| Gate-source charge 1 | Qgs1 | 31 | nC | VDD ≈ 80 V, VGS = 10 V, ID = 65 A | 3 | ||
| Gate-drain charge | Qgd | 18 | nC | VDD ≈ 80 V, VGS = 10 V, ID = 65 A | 3 | ||
| Gate switch charge | QSW | 32 | nC | VDD ≈ 80 V, VGS = 10 V, ID = 65 A | 3 | ||
| Reverse recovery time | trr | 76 | ns | IDR = 65 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 4 | ||
| Reverse recovery charge | Qrr | 150 | nC | IDR = 65 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 4 |
CAD (KiCad official)
- Symbol:
TK65E10N1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tk65e10n1-etched.step/tk65e10n1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk65e10n1.step/tk65e10n1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
bc770d08c52de31f, retrieved 2026-10-27, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).