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TK65E10N1

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TK65E10N1

TOSHIBA · MOSFETs · TO-220

TK65E10N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage limit is ±20 V (VGSS) with threshold Vth of 2.0 to 4.0 V at VDS = 10 V, ID = 1.0 mA.
2 Drain passive Drain terminal, connected to the heatsink tab; drain-source voltage rating is 100 V (VDSS) and DC drain current is 65 A (package limit 100 A).
3 Source passive Source terminal; reverse drain (body diode) current is 65 A DC and 296 A pulsed.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-220
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 100 V 1
Gate-source voltage VGSS -20 20 V 1
Drain current (DC) silicon limit ID 148 A Silicon limit, Tc = 25 1
Drain current (DC) ID 65 A Note 1,3 1
Drain current (pulsed) IDP 296 A t = 1 ms 1
Power dissipation PD 192 W Tc = 25 1
Single-pulse avalanche energy EAS 143 mJ VDD = 80 V, Tch = 25 (initial), L = 26.1 µH, IAR = 65 A 1
Avalanche current IAR 65 A 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Channel-to-case thermal resistance Rth(ch-c) 0.65 °C/W 2
Channel-to-ambient thermal resistance Rth(ch-a) 83.3 °C/W 2
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 100 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 100 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 65 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 2 4 V VDS = 10 V, ID = 1.0 mA 3
Drain-source on-resistance RDS(ON) 4 4.8 mΩ VGS = 10 V, ID = 32.5 A 3
Reverse drain current (DC) IDR 65 A 4
Reverse drain current (pulsed) IDRP 296 A 4
Diode forward voltage VDSF -1.2 V IDR = 65 A, VGS = 0 V 4
Input capacitance Ciss 5400 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 42 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 950 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 3
Gate resistance rg 2.4 Ω 3
Rise time tr 19 ns See Figure 6.2.1 3
Turn-on time ton 44 ns See Figure 6.2.1 3
Fall time tf 26 ns See Figure 6.2.1 3
Turn-off time toff 85 ns See Figure 6.2.1 3
Total gate charge Qg 81 nC VDD ≈ 80 V, VGS = 10 V, ID = 65 A 3
Gate-source charge 1 Qgs1 31 nC VDD ≈ 80 V, VGS = 10 V, ID = 65 A 3
Gate-drain charge Qgd 18 nC VDD ≈ 80 V, VGS = 10 V, ID = 65 A 3
Gate switch charge QSW 32 nC VDD ≈ 80 V, VGS = 10 V, ID = 65 A 3
Reverse recovery time trr 76 ns IDR = 65 A, VGS = 0 V, -dIDR/dt = 100 A/µs 4
Reverse recovery charge Qrr 150 nC IDR = 65 A, VGS = 0 V, -dIDR/dt = 100 A/µs 4

CAD (KiCad official)

  • Symbol: TK65E10N1
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: tk65e10n1-etched.step / tk65e10n1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk65e10n1.step / tk65e10n1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 bc770d08c52de31f, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF