component
SH8K41GZETB
Public Made by Adomby adom
ROHM Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownSH8K41GZETB
ROHM Semicon · MOSFETs · SOP-8
SH8K41GZETB from ROHM Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Tr1 source terminal of the first Nch MOSFET (VDSS 80V, ID ±3.4A). |
| 2 | G1 | input | Tr1 gate terminal with ESD protection diode; VGSS limit ±20V, threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Tr2 source terminal of the second Nch MOSFET (VDSS 80V, ID ±3.4A). |
| 4 | G2 | input | Tr2 gate terminal with ESD protection diode; VGSS limit ±20V, threshold 1.0 to 2.5V. |
| 5 | D2 | passive | Tr2 drain terminal; VDSS 80V, continuous drain current ±3.4A, pulsed ±13.6A. |
| 6 | D2 | passive | Tr2 drain terminal (second drain pin, tied internally to pin 5); VDSS 80V, ±3.4A continuous. |
| 7 | D1 | passive | Tr1 drain terminal; VDSS 80V, continuous drain current ±3.4A, pulsed ±13.6A. |
| 8 | D1 | passive | Tr1 drain terminal (second drain pin, tied internally to pin 7); VDSS 80V, ±3.4A continuous. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOP-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source voltage | VDSS | 80 | V | Ta = 25°C | 1 | ||
| Continuous drain current | ID | -3.4 | 3.4 | A | Ta = 25°C | 1 | |
| Pulsed drain current | IDP | -13.6 | 13.6 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 1 | |
| Gate-Source voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Power dissipation (total), ceramic board | PD | 2 | W | Mounted on a ceramic board (30×30×0.8mm) | 1 | ||
| Power dissipation (total), FR4 | PD | 1.4 | W | Mounted on a FR4 (25×25×0.8mm) | 1 | ||
| Junction temperature | Tj | 150 | °C | 1 | |||
| Operating junction and storage temperature range | Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance junction-ambient (total), ceramic board | RthJA | 62.5 | ℃/W | Mounted on a ceramic board (30×30×0.8mm) | 2 | ||
| Thermal resistance junction-ambient (total), FR4 | RthJA | 89.2 | ℃/W | Mounted on a FR4 (25×25×0.8mm) | 2 | ||
| Drain-Source breakdown voltage | V(BR)DSS | 80 | V | VGS = 0V, ID = 1mA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS = 80V, VGS = 0V | 2 | ||
| Gate-Source leakage current | IGSS | -10 | 10 | μA | VDS = 0V, VGS = ±20V | 2 | |
| Gate threshold voltage | VGS(th) | 1 | 2.5 | V | VDS = 10V, ID = 1mA | 2 | |
| Static drain-source on-state resistance | RDS(on) | 90 | 130 | mΩ | VGS = 10V, ID = 3.4A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 110 | 150 | mΩ | VGS = 4.5V, ID = 3.4A | 2 | |
| Static drain-source on-state resistance | RDS(on) | 120 | 160 | mΩ | VGS = 4.0V, ID = 3.4A | 2 | |
| Forward transfer admittance | /Yfs/ | 3 | S | VDS = 10V, ID = 3.4A, pulsed | 2 | ||
| Body diode continuous forward current | IS | 1.6 | A | Ta = 25℃ | 3 | ||
| Body diode pulse forward current | ISP | 13.6 | A | Pw ≦ 10μs, Duty cycle ≦ 1% | 3 | ||
| Body diode forward voltage | VSD | 1.2 | V | VGS = 0V, IS = 1.6A | 3 | ||
| Breakdown voltage temperature coefficient | ΔV(BR)DSS/ΔTj | 81.3 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Gate threshold voltage temperature coefficient | ΔVGS(th)/ΔTj | -4.4 | mV/℃ | ID = 1mA referenced to 25℃ | 2 | ||
| Gate resistance | RG | 5 | Ω | f = 1MHz, open drain | 2 | ||
| Input capacitance | Ciss | 600 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Output capacitance | Coss | 100 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Reverse transfer capacitance | Crss | 40 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 3 | ||
| Turn-on delay time | td(on) | 12 | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 | ||
| Rise time | tr | 15 | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 | ||
| Turn-off delay time | td(off) | 40 | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 | ||
| Fall time | tf | 12 | ns | VDD ⋍ 40V, VGS = 10V, ID = 1.7A, RL = 24Ω, RG = 10Ω | 3 | ||
| Total gate charge | Qg | 6.6 | nC | VDD ⋍ 40V, ID = 3.4A, VGS = 5.0V | 3 | ||
| Gate-Source charge | Qgs | 1.8 | nC | VDD ⋍ 40V, ID = 3.4A, VGS = 5.0V | 3 | ||
| Gate-Drain charge | Qgd | 2.2 | nC | VDD ⋍ 40V, ID = 3.4A, VGS = 5.0V | 3 |
CAD (KiCad official)
- Symbol:
SH8K41GZETB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
sh8k41gzetb-etched.step/sh8k41gzetb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);sh8k41gzetb.step/sh8k41gzetb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (14 pp, sha256
68246ac045b87db4, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).