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S8550-H
Public Made by Adomby adom
Shandong Jingdao Microelectronics Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownS8550-H
Shandong Jingdao Microelectronics · Bipolar (BJT) · SOT-23
S8550-H from Shandong Jingdao Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the datasheet gives VEBO of -5 V and a base-emitter saturation voltage of up to -1.2 V at IC=-500 mA, IB=-50 mA. |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-100 uA. |
| 3 | COLLECTOR | passive | Collector terminal rated for -0.5 A continuous collector current, -25 V VCEO, -40 V VCBO, and 0.3 W collector dissipation. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shandong Jingdao Microelectronics |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-100uA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -25 | V | IC=-1 mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-100uA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-40V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-3V, IC=0 | 1 | ||
| DC current gain (rank H, classification of hFE(1)) | hFE1 | 300 | 400 | 1 | |||
| DC current gain hFE(1) | hFE1 | 120 | 400 | VCE=-1V, IC=-50mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | -0.6 | V | IC=-500mA, IB=-50mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | -1.2 | V | IC=-500mA, IB=-50mA | 1 | ||
| Collector Current, Continuous | IC | -0.5 | A | 1 | |||
| Collector-Base Voltage | VCBO | -40 | V | 1 | |||
| Collector-Emitter Voltage | VCEO | -25 | V | 1 | |||
| Emitter-Base Voltage | VEBO | -5 | V | 1 | |||
| Collector Dissipation | PC | 0.3 | W | 1 | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
S8550-H - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
s8550-h-etched.step/s8550-h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);s8550-h.step/s8550-h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256
3b50922b9c63126f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).