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S8550-H

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Shandong Jingdao Microelectronics Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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S8550-H

Shandong Jingdao Microelectronics · Bipolar (BJT) · SOT-23

S8550-H from Shandong Jingdao Microelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the datasheet gives VEBO of -5 V and a base-emitter saturation voltage of up to -1.2 V at IC=-500 mA, IB=-50 mA.
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is -5 V minimum at IE=-100 uA.
3 COLLECTOR passive Collector terminal rated for -0.5 A continuous collector current, -25 V VCEO, -40 V VCBO, and 0.3 W collector dissipation.

Key specifications

Parameter Value
Manufacturer Shandong Jingdao Microelectronics
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -40 V IC=-100uA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO -25 V IC=-1 mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-100uA, IC=0 1
Collector cut-off current ICBO -0.1 uA VCB=-40V, IE=0 1
Emitter cut-off current IEBO -0.1 uA VEB=-3V, IC=0 1
DC current gain (rank H, classification of hFE(1)) hFE1 300 400 1
DC current gain hFE(1) hFE1 120 400 VCE=-1V, IC=-50mA 1
Collector-emitter saturation voltage VCE(sat) -0.6 V IC=-500mA, IB=-50mA 1
Base-emitter saturation voltage VBE(sat) -1.2 V IC=-500mA, IB=-50mA 1
Collector Current, Continuous IC -0.5 A 1
Collector-Base Voltage VCBO -40 V 1
Collector-Emitter Voltage VCEO -25 V 1
Emitter-Base Voltage VEBO -5 V 1
Collector Dissipation PC 0.3 W 1
Operation Junction and Storage Temperature Range TJ,Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: S8550-H
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: s8550-h-etched.step / s8550-h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); s8550-h.step / s8550-h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shandong Jingdao Microelectronics datasheet (4 pp, sha256 3b50922b9c63126f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF