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2SJ337-TL-E-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SJ337-TL-E-VB
VBsemi Elec · MOSFETs · TO-252
2SJ337-TL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated for VGS of ±20 V with a threshold VGS(th) of -1.0 to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain of the P-channel MOSFET (also the exposed tab), rated for VDS of -30 V with RDS(on) of 0.033 Ω at VGS = -10 V. |
| 3 | S | passive | Source of the P-channel MOSFET, with a continuous source-drain diode current of -4.1 A at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current | IDM | -112 | A | TA = 25 °C | 1 | ||
| Avalanche Current | IAS | -20 | A | L = 0.1 mH | 1 | ||
| Single-Pulse Avalanche Energy | EAS | 20 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 25 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 20 | W | TC = 70 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.7 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.7 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 38 | 46 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Foot Thermal Resistance | RthJF | 20 | 25 | °C/W | Steady State | 1 | |
| Drain-Source Breakdown Voltage | VDS | -30 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -2.5 | -1 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 25 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | -30 | A | VDS ≥ - 10 V, VGS = - 10 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.033 | Ω | VGS = - 10 V, ID = - 10 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.046 | Ω | VGS = - 4.5 V, ID = - 8 A | 2 | ||
| Total Gate Charge | Qg | 27 | 43 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | 2 | |
| Total Gate Charge | Qg | 19 | 25 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 | |
| Gate Resistance | Rg | 0.5 | 2.2 | 4.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) | 13 | 25 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 12 | 24 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 40 | 70 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 9 | 18 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 | |
| Turn-On Delay Time | td(on) | 48 | 80 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 92 | 160 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 34 | 60 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Fall Time | tf | 19 | 35 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 | |
| Continuous Source-Drain Diode Current | IS | -4.1 | A | TC = 25 °C | 2 | ||
| Pulse Diode Forward Current | ISM | -40 | A | 2 | |||
| Body Diode Voltage | VSD | -0.75 | -1.2 | V | IS = - 3 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 27 | 45 | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 16 | 27 | nC | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| VDS Temperature Coefficient | ΔVDS/TJ | -34 | mV/°C | ID = - 250 µA | 2 | ||
| VGS(th) Temperature Coefficient | ΔVGS(th)/TJ | 5.3 | mV/°C | 2 | |||
| Forward Transconductance | gfs | 28 | S | VDS = - 10 V, ID = - 10 A | 2 | ||
| Input Capacitance | Ciss | 1350 | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 255 | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 190 | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
CAD (KiCad official)
- Symbol:
2SJ337-TL-E-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sj337-tl-e-vb-etched.step/2sj337-tl-e-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sj337-tl-e-vb.step/2sj337-tl-e-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
d89f49795b3eabc4, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).