component

2SJ337-TL-E-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistor2sj337-tl-e-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 2d ago
viewers 2sj337-tl-e-vb: viewers · Ray 2d ago
2sj337-tl-e-vb-etched.glb Publish 0.1.0 · Ray 2d ago
2sj337-tl-e-vb-etched.step 2sj337-tl-e-vb: factory component page (tier=lcsc) · Ray 2d ago
2sj337-tl-e-vb-hero.glb 2sj337-tl-e-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 2d ago
2sj337-tl-e-vb-hero.overlay.json Publish 0.1.0 · Ray 2d ago
2sj337-tl-e-vb.glb Publish 0.1.0 · Ray 2d ago
2sj337-tl-e-vb.kicad_mod Publish 0.1.0 · Ray 2d ago
2sj337-tl-e-vb.kicad_sym Publish 0.1.0 · Ray 2d ago
2sj337-tl-e-vb.lbr Publish 0.1.0 · Ray 2d ago
2sj337-tl-e-vb.step Publish 0.1.0 · Ray 2d ago
package.json Publish 0.1.0 · Ray 2d ago
page.json Set visibility: public · Ray 2d ago
README.md Publish 0.1.0 · Ray 2d ago

2SJ337-TL-E-VB

VBsemi Elec · MOSFETs · TO-252

2SJ337-TL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, rated for VGS of ±20 V with a threshold VGS(th) of -1.0 to -2.5 V at ID = -250 µA.
2 D passive Drain of the P-channel MOSFET (also the exposed tab), rated for VDS of -30 V with RDS(on) of 0.033 Ω at VGS = -10 V.
3 S passive Source of the P-channel MOSFET, with a continuous source-drain diode current of -4.1 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM -112 A TA = 25 °C 1
Avalanche Current IAS -20 A L = 0.1 mH 1
Single-Pulse Avalanche Energy EAS 20 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 25 W TC = 25 °C 1
Maximum Power Dissipation PD 20 W TC = 70 °C 1
Maximum Power Dissipation PD 2.7 W TA = 25 °C 1
Maximum Power Dissipation PD 1.7 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 38 46 °C/W t ≤ 10 s 1
Junction-to-Foot Thermal Resistance RthJF 20 25 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -30 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -2.5 -1 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 25 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -5 µA VDS = - 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -30 A VDS ≥ - 10 V, VGS = - 10 V 2
Drain-Source On-State Resistance RDS(on) 0.033 Ω VGS = - 10 V, ID = - 10 A 2
Drain-Source On-State Resistance RDS(on) 0.046 Ω VGS = - 4.5 V, ID = - 8 A 2
Total Gate Charge Qg 27 43 nC VDS = - 15 V, VGS = - 10 V, ID = - 10 A 2
Total Gate Charge Qg 19 25 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A 2
Gate Resistance Rg 0.5 2.2 4.4 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 13 25 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 12 24 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 40 70 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 48 80 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 92 160 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 34 60 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 19 35 ns VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -4.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -40 A 2
Body Diode Voltage VSD -0.75 -1.2 V IS = - 3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 27 45 ns IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 16 27 nC IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -34 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 5.3 mV/°C 2
Forward Transconductance gfs 28 S VDS = - 10 V, ID = - 10 A 2
Input Capacitance Ciss 1350 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 255 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 190 pF VDS = - 15 V, VGS = 0 V, f = 1 MHz 2

CAD (KiCad official)

  • Symbol: 2SJ337-TL-E-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 2sj337-tl-e-vb-etched.step / 2sj337-tl-e-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sj337-tl-e-vb.step / 2sj337-tl-e-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 d89f49795b3eabc4, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF