component
HMMDT55517F
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownHMMDT55517F
HXY MOSFET · Bipolar (BJT) · SOT-363
HMMDT55517F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E1 | passive | Emitter of transistor 1 (pin 1, bottom-left in the package drawing); VEBO max 6 V. |
| 2 | B1 | passive | Base of transistor 1; emitter-base voltage limited to 6 V. |
| 3 | C2 | passive | Collector of transistor 2; VCEO 160 V max, IC 200 mA max. |
| 4 | E2 | passive | Emitter of transistor 2 (top-right in the package drawing); VEBO max 6 V. |
| 5 | B2 | passive | Base of transistor 2; emitter-base voltage limited to 6 V. |
| 6 | C1 | passive | Collector of transistor 1; VCEO 160 V max, IC 200 mA max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -160 | V | IC=-100μA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -150 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10μA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | -0.05 | μA | VCB=-120V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | -0.05 | μA | VEB=-3V, IC=0 | 1 | ||
| DC current gain | hFE(1) | 50 | VCE=-5V, IC=-1mA | 1 | |||
| DC current gain | hFE(2) | 100 | 200 | VCE=-5V, IC=-10mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)1 | -0.2 | V | IC=-10mA, IB=-1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | -0.5 | V | IC=-50mA, IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)1 | -1 | V | IC=-10mA, IB=-1mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=-10V, IC=-10mA, f=100MHz | 1 | ||
| Output capacitance | Cob | 6 | pF | VCB=-10V, IE=0, f=1MHz | 1 | ||
| Noise figure | NF | 8 | dB | VCE=-5.0V, IC=-200μA, RS=10Ω, f=1.0kHz | 1 | ||
| Collector-base voltage | VCBO | 180 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | 160 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | 6 | V | Ta=25°C | 1 | ||
| Collector current | IC | 200 | mA | Ta=25°C | 1 | ||
| Collector power dissipation | PC | 200 | mW | Ta=25°C | 1 | ||
| Operation junction and storage temperature range | TJ, Tstg | -55 | 150 | ℃ | Ta=25°C | 1 | |
| Thermal resistance from junction to ambient | RΘJA | 625 | ℃/W | Ta=25°C | 1 |
CAD (KiCad official)
- Symbol:
HMMDT55517F - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
hmmdt55517f-etched.step/hmmdt55517f-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);hmmdt55517f.step/hmmdt55517f.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (4 pp, sha256
7d2e1d7f8ecd4b96, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).