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Generated by kicad-footprint-generator · KiCad file format 20260206

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hmmdt55517f-etched.step	hmmdt55517f: factory component page (tier=lcsc) · Ray	14d ago
hmmdt55517f-hero.glb	hmmdt55517f: hero GLB from the etched model (keeps the MPN mark) · Ray	14d ago
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HMMDT55517F

HXY MOSFET · Bipolar (BJT) · SOT-363

HMMDT55517F from HXY MOSFET, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	E1	passive	Emitter of transistor 1 (pin 1, bottom-left in the package drawing); VEBO max 6 V.
2	B1	passive	Base of transistor 1; emitter-base voltage limited to 6 V.
3	C2	passive	Collector of transistor 2; VCEO 160 V max, IC 200 mA max.
4	E2	passive	Emitter of transistor 2 (top-right in the package drawing); VEBO max 6 V.
5	B2	passive	Base of transistor 2; emitter-base voltage limited to 6 V.
6	C1	passive	Collector of transistor 1; VCEO 160 V max, IC 200 mA max.

Key specifications

Parameter	Value
Manufacturer	HXY MOSFET
Package	SOT-363
Category	Transistors/Thyristors
Pins	6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Collector-base breakdown voltage	V(BR)CBO	-160		V	IC=-100μA, IE=0	1
Collector-emitter breakdown voltage	V(BR)CEO	-150		V	IC=-1mA, IB=0	1
Emitter-base breakdown voltage	V(BR)EBO	-5		V	IE=-10μA, IC=0	1
Collector cut-off current	ICBO		-0.05	μA	VCB=-120V, IE=0	1
Emitter cut-off current	IEBO		-0.05	μA	VEB=-3V, IC=0	1
DC current gain	hFE(1)	50			VCE=-5V, IC=-1mA	1
DC current gain	hFE(2)	100	200		VCE=-5V, IC=-10mA	1
Collector-emitter saturation voltage	VCE(sat)1		-0.2	V	IC=-10mA, IB=-1mA	1
Collector-emitter saturation voltage	VCE(sat)2		-0.5	V	IC=-50mA, IB=-5mA	1
Base-emitter saturation voltage	VBE(sat)1		-1	V	IC=-10mA, IB=-1mA	1
Transition frequency	fT	100		MHz	VCE=-10V, IC=-10mA, f=100MHz	1
Output capacitance	Cob		6	pF	VCB=-10V, IE=0, f=1MHz	1
Noise figure	NF		8	dB	VCE=-5.0V, IC=-200μA, RS=10Ω, f=1.0kHz	1
Collector-base voltage	VCBO		180	V	Ta=25°C	1
Collector-emitter voltage	VCEO		160	V	Ta=25°C	1
Emitter-base voltage	VEBO		6	V	Ta=25°C	1
Collector current	IC		200	mA	Ta=25°C	1
Collector power dissipation	PC		200	mW	Ta=25°C	1
Operation junction and storage temperature range	TJ, Tstg	-55	150	℃	Ta=25°C	1
Thermal resistance from junction to ambient	RΘJA		625	℃/W	Ta=25°C	1

CAD (KiCad official)

Symbol: HMMDT55517F
Footprint: Package_TO_SOT_SMD:SOT-363_SC-70-6
3D model: SOT-363 (KiCad packages3D, STEP)
3D model files: hmmdt55517f-etched.step / hmmdt55517f-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); hmmdt55517f.step / hmmdt55517f.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: HXY MOSFET datasheet (4 pp, sha256 7d2e1d7f8ecd4b96, retrieved 2026-10-26, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF